용액 공정으로 증착된 HfOx 감지막을 갖는 Electrolyte-Insulator-Semiconductor 소자의 두께 의존성
Thickness Dependence of Solution Deposited HfOx Sensing Membrane for Electrolyte-Insulator-Semiconductor (EIS) Structures
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초록
We fabricated electrolyte–insulator-semiconductor (EIS) devices using a solution process and measured the sensing properties of EIS devices according to the thicknesses of sensing membrane. For high pH sensitivity and better stability properties, we used SiO2/HfOx (OH) layer as a sensing membrane. In this work, HfOx sensing membranes were deposited on 5 nm thick SiO2 buffer layer by spin coater with thicknesses of 15, 31, 42, 55 nm, respectively. As a result, we founded that the thickness of HfOx sensing membrane affects to sensitivity and chemical stability of EIS device. Especially, the EIS device with 42 nm thick HfOx membrane showed superior sensing ability in terms of pH-sensitivity, linearity, hysteresis voltage and drift rate characteristics than the other devices. In conclusion, we confirmed that it is possible to improve the sensing ability and the chemical stability properties using optimized thickness of sensing membrane and proper annealing process.
Abstract
We fabricated electrolyte–insulator-semiconductor (EIS) devices using a solution process and measured the sensing properties of EIS devices according to the thicknesses of sensing membrane. For high pH sensitivity and better stability properties, we used SiO2/HfOx (OH) layer as a sensing membrane. In this work, HfOx sensing membranes were deposited on 5 nm thick SiO2 buffer layer by spin coater with thicknesses of 15, 31, 42, 55 nm, respectively. As a result, we founded that the thickness of HfOx sensing membrane affects to sensitivity and chemical stability of EIS device. Especially, the EIS device with 42 nm thick HfOx membrane showed superior sensing ability in terms of pH-sensitivity, linearity, hysteresis voltage and drift rate characteristics than the other devices. In conclusion, we confirmed that it is possible to improve the sensing ability and the chemical stability properties using optimized thickness of sensing membrane and proper annealing process.
참고문헌 (16)
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