내장된 전송게이트를 가지는 Gate/Body-Tied PMOSFET 광 검출기의 모델링
Modeling of Gate/Body-Tied PMOSFET Photodetector with Built-in Transfer Gate
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In this paper, modeling of a gate/body-tied (GBT) PMOSFET photodetector with built-in transfer gate is performed. It can control the photocurrent with a high-sensitivity. The GBT photodetector is a hybrid device consisted of a MOSFET, a lateral BJT, and a vertical BJT. This device allows for amplifying the photocurrent gain by 103 due to the GBT structure. However, the operating parameters of this photodetector, including its photocurrent and transfer characteristics, were not known because modeling has not yet been performed. The sophisticated model of GBT photodetector using a process simulator is not compatible with circuit simulator. For this reason, we have performed SPICE modeling of the photodetector with reduced complexity using Cadence’s Spectre program. The proposed modeling has been demonstrated by measuring fabricated chip by using 0.35 ìm 2-poly 4-metal standard CMOS technology.
Abstract
In this paper, modeling of a gate/body-tied (GBT) PMOSFET photodetector with built-in transfer gate is performed. It can control the photocurrent with a high-sensitivity. The GBT photodetector is a hybrid device consisted of a MOSFET, a lateral BJT, and a vertical BJT. This device allows for amplifying the photocurrent gain by 103 due to the GBT structure. However, the operating parameters of this photodetector, including its photocurrent and transfer characteristics, were not known because modeling has not yet been performed. The sophisticated model of GBT photodetector using a process simulator is not compatible with circuit simulator. For this reason, we have performed SPICE modeling of the photodetector with reduced complexity using Cadence’s Spectre program. The proposed modeling has been demonstrated by measuring fabricated chip by using 0.35 ìm 2-poly 4-metal standard CMOS technology.
참고문헌 (28)
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