Highly-Sensitive Gate/Body-Tied MOSFET-Type Photodetector Using Multi-Finger Structure
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In this paper, we present a highly-sensitive gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-typephotodetector using multi-finger structure whose photocurrent increases in proportion to the number of fingers. The drain current that flows through a MOSFET using multi-finger structure is proportional to the number of fingers. This study intends to confirm that the photocurrent of a GBT MOSFET-type photodetector that uses the proposed multi-finger structure is larger than the photocurrent per unit area of the existing GBT MOSFET-type photodetectors. Analysis and measurement of a GBT MOSFET-type photodetector that utilizes a multi-finger structure confirmed that photocurrent increases in ratio to the number of fingers. In addition, the characteristics of the photocurrent in relation to the optical power were measured. In order to determine the influence of the incident the wavelength of light, the photocurrent was recorded as the incident the wavelength of light varied over a range of 405 to 980 nm. A highly-sensitive GBT MOS-FET-type photodetector with multi-finger structure was designed and fabricated by using the Taiwan semiconductor manufacturing company (TSMC) complementary metal-oxide-semiconductor (CMOS) 0.18 um 1-poly 6-metal process and its characteristics have been measured.
Abstract
In this paper, we present a highly-sensitive gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-typephotodetector using multi-finger structure whose photocurrent increases in proportion to the number of fingers. The drain current that flows through a MOSFET using multi-finger structure is proportional to the number of fingers. This study intends to confirm that the photocurrent of a GBT MOSFET-type photodetector that uses the proposed multi-finger structure is larger than the photocurrent per unit area of the existing GBT MOSFET-type photodetectors. Analysis and measurement of a GBT MOSFET-type photodetector that utilizes a multi-finger structure confirmed that photocurrent increases in ratio to the number of fingers. In addition, the characteristics of the photocurrent in relation to the optical power were measured. In order to determine the influence of the incident the wavelength of light, the photocurrent was recorded as the incident the wavelength of light varied over a range of 405 to 980 nm. A highly-sensitive GBT MOS-FET-type photodetector with multi-finger structure was designed and fabricated by using the Taiwan semiconductor manufacturing company (TSMC) complementary metal-oxide-semiconductor (CMOS) 0.18 um 1-poly 6-metal process and its characteristics have been measured.
참고문헌 (16)
- L. Yao, "CMOS Imaging of Pin-Printed Xerogel-Based Luminescent Sensor Microarrays", IEEE Sens. J, 10(12), pp.1824~1832 (2010)
- E. R. Fossum, "CMOS image sensors : electronic cameraon-a-chip", IEEE Trans. Electron Devices, 44(10), pp.1689~1698 (1997)
- M. Bigas, "Review of CMOS image sensors", Microelectronics J, 37(5), pp.433~451 (2006)
- H. Alaibakhsh, "Analytical Modeling of Pinning Process in Pinned Photodiodes", IEEE Trans. Electron Devices, 65(10), pp.4262~4368 (2018)
- E. R. Fossum, "A review of the pinned photodiode for CCD and CMOS image sensors", IEEE J. Electron Devices Soc, 2(3), pp.33~43 (2014)
- N. Tanaka, "A Novel Bipolar Imaging Device with Self-Noise-Reduction Capability", IEEE Trans. Electron Devices, 36(1), pp.31~38 (1989)
- W. Shi, "Mixed Design of SPAD Array Based TOF for Depth Camera and Unmanned Vehicle Applications", SMACD 2018 - 15th Int. Conf. Synth. Model. Anal. Simul. Methods Appl, pp.277~280 (2018)
- J. Kekkonen, "On the Spectral Quality of Time-Resolved CMOS SPAD-Based Raman Spectroscopy with High Fluorescence Backgrounds", IEEE Sens. J, 20(9), pp.4635~4645 (2020)
- S. -H. Seo, "Optical characteristics of an N-Well", gate-tied PMOSFET-type photodetector with built-in transfer gate for CMOS image sensor, 2007, pp.19(7), 435~444
- 권현우, "Simulation of High-Speed and Low-Power CMOS Binary Image Sensor Based on Gate", Body-Tied PMOSFET-Type Photodetector Using Double-Tail Comparator, 2020, pp.29(2), 82~88[DOI]
- F. Haddad, "Effect of MultiFinger Gate MOSFET on RF Analog Integrated Circuit Performances", 20~21 (2020)
- C. Y. Lin, "Impact of Inner Pickup on ESD Robustness of Multifinger MOSFET in 28-nm High-k", Metal Gate CMOS Process, 2015, pp.15(4), 633~636
- K. Hsuan Meng, "Compact distributed multi-finger MOSFET model for circuit-level ESD simulation", Microelectron. Reliab, 63, pp.11~21 (2016)
- W. Effect, "A Study on Improved SPICE MOSFET RF Model Considering Wide Width Effect", 77(77), pp.77~82 (2008)
- 장준영, "Photocurrent Characteristics of Gate", Body-Tied MOSFET-Type Photodetector with High Sensitivity, 2022, pp.31(1), 1~5[DOI]
- 장준영, "Effects of Transfer Gate on the Photocurrent Characteristics of Gate", Body-Tied MOSFET-Type Photodetector, 2022, pp.31(1), 12~15[DOI]