Effects of Transfer Gate on the Photocurrent Characteristics of Gate/Body-Tied MOSFET-Type Photodetector
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In this study, we studied the effects of transfer gate on the photocurrent characteristics of gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector. The GBT MOSFET-type photodetector has high sensitivity owing to the amplifying characteristic of the photocurrent generated by light. The transfer gate controls the flow of photocurrent by controlling the barrier to holes, thereby varying the sensitivity of the photodetector. The presented GBT MOSFET-type photodetector using a builtin transfer gate was designed and fabricated via a 0.18-µm standard complementary metal-oxide-semiconductor (CMOS) process. Using a laser diode, the photocurrent was measured according to the wavelength of the incident light by adjusting the voltage of the transfer gate. Variable sensitivity of the presented GBT MOSFET-type photodetector was experimentally confirmed by adjusting the transfer gate voltage in the range of 405 nm to 980 nm.
Abstract
In this study, we studied the effects of transfer gate on the photocurrent characteristics of gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector. The GBT MOSFET-type photodetector has high sensitivity owing to the amplifying characteristic of the photocurrent generated by light. The transfer gate controls the flow of photocurrent by controlling the barrier to holes, thereby varying the sensitivity of the photodetector. The presented GBT MOSFET-type photodetector using a builtin transfer gate was designed and fabricated via a 0.18-µm standard complementary metal-oxide-semiconductor (CMOS) process. Using a laser diode, the photocurrent was measured according to the wavelength of the incident light by adjusting the voltage of the transfer gate. Variable sensitivity of the presented GBT MOSFET-type photodetector was experimentally confirmed by adjusting the transfer gate voltage in the range of 405 nm to 980 nm.
참고문헌 (16)
- E. R. Fossum, "CMOS Image Sensors : Electronic Camera-On-A-Chip", IEEE Trans. Electron. Devices, 44(10), pp.1689~1698 (1997)
- S. Mehta, "CCD or CMOS Image sensor for photography", 2015 Int. Conf. Commun. Signal Process. ICCSP 2015, pp.291~294 (2015)
- B. S. Carlson, "Comparison of Modern CCD and CMOS Image Sensor Technologies and Systems for Low Resolution Imaging", Proc. IEEE Sens, 1(1), pp.171~176 (2002)
- M. Bigas, "Review of CMOS image sensors", Microelectron. J, 37(5), pp.433~451 (2006)
- B. Luo, "Research of noise suppression for CMOS image sensor", 2010 Int. Conf. Meas. Technol. Mechatron. Autom. ICMTMA 2010, 2, pp.1100~1103 (2010)
- 이준우, "CMOS Binary Image Sensor with Gate", Body-Tied PMOSFET-Type Photodetector for Low-Power and Low-Noise Operation, 2018, pp.27(6), 362~367[DOI]
- 권현우, "Simulation of High-Speed and Low-Power CMOS Binary Image Sensor Based on Gate", Body-Tied PMOSFET-Type Photodetector Using Double-Tail Comparator, 2020, pp.29(2), 82~88[DOI]
- H. Alaibakhsh, "Analytical Modeling of Pinning Process in Pinned Photodiodes", IEEE Trans. Electron. Devices, 65(10), pp.4262~4368 (2018)
- J. H. Park, "Quantumwired MOSFET photodetector fabricated by conventional photolithography on SOI substrate", 2004 4th IEEE Conf. Nanotechnol, pp.425~427 (2004)
- E. R. Fossum, "A review of the pinned photodiode for CCD and CMOS image sensors", IEEE J. Electron. Devices Soc, 2(3), pp.33~43 (2014)
- L. A. P. Santos, "An alternative method for using bipolar junction transistors as a radiation dosimetry detector in breast cancer treatment", Radiat. Meas, 71, pp.407~411 (2014)
- W. Zhang, "A high gain N-Well", Gate tied PMOSFET image sensor fabricated from a standard CMOS process, 2001, pp.48(6), 1097~1102
- 김상환, "Gate", Body-Tied 구조의 고감도 광검출기를 이용한 2500 fps 고속 바이너리 CMOS 이미지센서, 2021, pp.30(1), 61~65[DOI]
- 장준영, "CMOS binary image sensor with high-sensitivity metal-oxide semiconductor field-effect transistor-type photodetector for high-speed imaging", 센서학회지, 30(5), pp.295~299 (2021), 한국센서학회
- 장준영, "전송 게이트가 내장된 Gate", Body-Tied P-Channel Metal-Oxide Semiconductor Field-Effect Transistor 구조 광 검출기를 이용한 감도 가변형 능동 화소 센서, 2021, pp.30(2), 114~118[DOI]
- S. H. Seo, "Optical characteristics of an N-Well", gate-tied PMOSFET-type photodetector with built-in transfer gate for CMOS image sensor, 2007, pp.19(7), 435~444