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내장된 전송 게이트를 가지는 n-well/gate가 연결된 구조의 PMOSFET형 광검출기의 동작 범위 확장

Dynamic range extension of the n-well/gate-tied PMOSFET-type photodetector with a built-in transfer gate

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초록

We have designed and fabricated an active pixel sensor(APS) using an optimized n-well/gate-tied p-channel metal oxide semiconductor field effect transistor(PMOSFET)-type photodetector with a built-in transfer gate. This photodetector has a floating gate connected to n-well and a built-in transfer gate. The photodetector has been optimized by changing the length of the transfer gate. The APS has been fabricated using a 0.35 μm standard complementary metal oxide semiconductor(CMOS) process. It was confirmed that the proposed APS has a wider dynamic range than the APS using the previously proposed photodetector and a higher sensitivity than the conventional APS using a p-n junction photodiode.

Abstract

We have designed and fabricated an active pixel sensor(APS) using an optimized n-well/gate-tied p-channel metal oxide semiconductor field effect transistor(PMOSFET)-type photodetector with a built-in transfer gate. This photodetector has a floating gate connected to n-well and a built-in transfer gate. The photodetector has been optimized by changing the length of the transfer gate. The APS has been fabricated using a 0.35 μm standard complementary metal oxide semiconductor(CMOS) process. It was confirmed that the proposed APS has a wider dynamic range than the APS using the previously proposed photodetector and a higher sensitivity than the conventional APS using a p-n junction photodiode.

참고문헌 (9)

  1. Sunetra Mendis, "CMOS active pixel image sensor", IEEE Trans. Elect. Dev, 41(3), pp.452~453 (1994)
  2. E.Fossum, "CMOS image sensor:Eletronic camera on a chip", IEEE Trans. Elect. Dev, 44(10), pp.1689~1698 (1997)
  3. Sunetra K. Mendis, "CMOS active pixel image sensors for highly integrated imaging systems", IEEE J. Solid-State Circuits, 32(2), pp.187~197 (1997)
  4. M. Bigas, "Review of CMOS image sensors", Microelectronics Journal, 37, pp.433~451 (2006)
  5. 김경도, "Charge Pump 회로를 이용한 능동 픽셀 센서의 동작 범위 개선", 센서학회지, 17(2), pp.114~119 (2008), 한국센서학회
  6. 서민웅, "출력 전압 피드백을 통한 능동 화소 센서의 동작 범위 확장", 센서학회지, 18(4), pp.274~279 (2009), 한국센서학회
  7. S. H. Seo, "Optical characteristics of an Nwell", gate-Tied PMOSFET-type photodetector with built-in transfer gate for CMOS image sensor, 2007, pp.19(7), 435~444
  8. S. H. Seo, "Highly and variably sensitive complementary metal oxide semiconductor active pixel sensor using P-channel metal oxide semiconductor field effect transistor-type photodetector with transfer gate", Jpn. J. Appl. Phys, 45(4B), pp.3470~3474 (2006)
  9. S. H. Seo, "Pseudo 2 transistor active pixel sensor using an N-well", gate-tied P-channel metal oxide semiconductor field effect transistor-type photodetector with built-in transfer gate, 2008, pp.15(6), 280~284

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