내장된 전송 게이트를 가지는 n-well/gate가 연결된 구조의 PMOSFET형 광검출기의 동작 범위 확장
Dynamic range extension of the n-well/gate-tied PMOSFET-type photodetector with a built-in transfer gate
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초록
We have designed and fabricated an active pixel sensor(APS) using an optimized n-well/gate-tied p-channel metal oxide semiconductor field effect transistor(PMOSFET)-type photodetector with a built-in transfer gate. This photodetector has a floating gate connected to n-well and a built-in transfer gate. The photodetector has been optimized by changing the length of the transfer gate. The APS has been fabricated using a 0.35 μm standard complementary metal oxide semiconductor(CMOS) process. It was confirmed that the proposed APS has a wider dynamic range than the APS using the previously proposed photodetector and a higher sensitivity than the conventional APS using a p-n junction photodiode.
Abstract
We have designed and fabricated an active pixel sensor(APS) using an optimized n-well/gate-tied p-channel metal oxide semiconductor field effect transistor(PMOSFET)-type photodetector with a built-in transfer gate. This photodetector has a floating gate connected to n-well and a built-in transfer gate. The photodetector has been optimized by changing the length of the transfer gate. The APS has been fabricated using a 0.35 μm standard complementary metal oxide semiconductor(CMOS) process. It was confirmed that the proposed APS has a wider dynamic range than the APS using the previously proposed photodetector and a higher sensitivity than the conventional APS using a p-n junction photodiode.
참고문헌 (9)
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