저온 공정을 통해 제작이 가능한 Sn/SWNT 혼합 파우더 기반의 TSV구조 개발
Manufacture of TSVs (Through-Silicon Vias) based on Single-Walled Nanotubes (SWNTs)/Sn Composite at Low Temperature
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In this study, the fabrication of through-silicon vias (TSVs) filled with SWNTs/Sn by utilizing surface/bulk micromachining and MEMS technologies is proposed. Tin (Sn) and single-walled nanotube (SWNT) powders are used as TSV interconnector materials in the development of a novel TSV at low temperature. The measured resistance of a TSV filled with SWNT/Sn powder is considerably reduced by increasing the fraction of Sn and is lower than that of a TSV filled with only Sn. This is because of a decrease in the surface scattering of electrons along with an increase in the grain size of sintered SWNTs/Sn. The proposed method is conducted at low temperatures (<400 °С) due to the low melting temperature of Sn; hence, the proposed TSVs filled with SWNTs/Sn can be utilized in CMOS based applications.
Abstract
In this study, the fabrication of through-silicon vias (TSVs) filled with SWNTs/Sn by utilizing surface/bulk micromachining and MEMS technologies is proposed. Tin (Sn) and single-walled nanotube (SWNT) powders are used as TSV interconnector materials in the development of a novel TSV at low temperature. The measured resistance of a TSV filled with SWNT/Sn powder is considerably reduced by increasing the fraction of Sn and is lower than that of a TSV filled with only Sn. This is because of a decrease in the surface scattering of electrons along with an increase in the grain size of sintered SWNTs/Sn. The proposed method is conducted at low temperatures (<400 °С) due to the low melting temperature of Sn; hence, the proposed TSVs filled with SWNTs/Sn can be utilized in CMOS based applications.
참고문헌 (13)
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