Extended SBM공정을 이용하여 단일 실리콘 기판상에 제작된 새로운 Z축 가속도계
A Novel z-axis Accelerometer Fabricated on a Single Silicon Substrate Using the Extended SBM Process
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Abstract
This paper presents a novel z-axis accelerometer with perfectly aligned vertical combs fabricated using the extended sacrificial bulk micromachining (extended SBM) process. The z-axis accelerometer is fabricated using only one (111) SOI wafer and two photo masks without wafer bonding or CMP processes as used by other research efforts that involve vertical combs. In our process, there is no misalignment in lateral gap between the upper and lower comb electrodes, because all critical dimensions including lateral gaps are defined using only one mask. The fabricated accelerometer has the structure thickness of 30 mm, the vertical offset of 12 mm, and lateral gap between electrodes of 4 mm. Torsional springs and asymmetric proof mass produce a vertical displacement when an external z-axis acceleration is applied, and capacitance change due to the vertical displacement of the comb is detected by charge-to-voltage converter. The signalto- noise ratio of the modulated and demodulated output signal is 80 dB and 76.5 dB, respectively. The noise equivalent input acceleration resolution of the modulated and demodulated output signal is calculated to be 500 mg and 748 mg. The scale factor and linearity of the accelerometer are measured to be 1.1 mV/g and 1.18% FSO, respectively.
참고문헌 (14)
- J. Lee,, "SOI-Baesd Fabrication Processes of the Scanning Nirror Having Vertical Comb Fingers", 102, pp.11~18 (2002)
- R.A. Conant,, "A Flat High-Frequency Scanning Micromirror", pp.6~13 (2000)
- A. Hanneborg, "Silicon Wafer Bonding Techniques for Assembly of Micromechanical Elements", pp.92~98 (1991)
- J. Kim,, "A Novel Electrostatic vertical Actuator Fabricated in one Homogeneous Silicon Wafer Using Extended SBM Technology", pp.756~759 (2001)
- J. Kim,, "An Extended Double SBM rocess for Vertical Actuation and Sensing Using One Single-crystalline Silicon Wafer", pp.291~298 (2001)
- J. Kim,, "A Novel Electrostatic Vertical Actuator Fabricated in One Homogeneous Silicon Wafer Using Extended SBM technology", pp.653~658 (2002)
- A. Selvakumar, "A High Sensitivity z-axis Torsional Silicon Accelerometer" (1996)
- S. Lee, "Extension of Surface", Bulk Micromachining One-mask fabrication Technology Enabling the integration of 6-DOF Inertial Sensors on a Single Wafer, 2001., 1136~1139
- D. Kwak, "Why is (111) Silicon a better Mechanical Material for MEMS: Torsion Case", pp.15~21 (2003), 2003 ASME International Mechanical Engineering Congress
- S. Lee, "The Surface", Bulk Micromachining (SBM) Process: A New Method for Fabricating Released Microelectromechanical System in Single Crytal Silicon, 1999., pp.8, 409~416
- D. Cho, "Surface", Bulk Micromachined High Performance Silicon Micro-gyroscope, 2000., ~
- S. Lee,, "Surface", Bulk Micromachined Single-crystalline Silicon Microgyroscope, 2000., pp.8(4), 557~567
- J. Kim, "Robust SOI Process without Footing for Ultra High-performance Microgyroscopes", pp.1691~1694 (2003)
- S. Park,, "A New Isolation Method for Single Crystal Silicon MEMS and Its Application to Z-axis Microgyroscope", pp.969~972 (2003)