ZnO:Er막의 UV 발광에 미치는 열처리 효과
Annealing effects of ZnO:Er films on UV emission
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Er-doped ZnO(ZnO:Er) films were deposited onto MgO wafers by ultrasonic spray pyrolysis at 550℃ varying the concentration of Er in the deposition source from 0.5 ﾠwt% to 3.0 ﾠwt%. Annealing of the films in a vacuum was carried out to increase the intensity of ultraviolet(UV) emission from the films. The annealing temperature was between 600℃ and 800℃. The crystallographic properties and surface morphology of the films were investigated by X-ray diffraction(XRD)and scanning electron microscope(SEM), respectively. The properties of photoluminescence(PL) for the films were inves- tigated by the dependence of PL spectra on the annealing temperature. X-ray photoelectron spectroscopy(XPS) was conducted to find the composition change in the films by the annealing.
Abstract
Er-doped ZnO(ZnO:Er) films were deposited onto MgO wafers by ultrasonic spray pyrolysis at 550℃ varying the concentration of Er in the deposition source from 0.5 ﾠwt% to 3.0 ﾠwt%. Annealing of the films in a vacuum was carried out to increase the intensity of ultraviolet(UV) emission from the films. The annealing temperature was between 600℃ and 800℃. The crystallographic properties and surface morphology of the films were investigated by X-ray diffraction(XRD)and scanning electron microscope(SEM), respectively. The properties of photoluminescence(PL) for the films were inves- tigated by the dependence of PL spectra on the annealing temperature. X-ray photoelectron spectroscopy(XPS) was conducted to find the composition change in the films by the annealing.
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