양극산화법과 UV-LED를 이용한 다공성 3C-SiC 박막 형성
Formation of porous 3C-SiC thin film by anodization with UV-LED
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초록
This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS(Hexamethyildisilane: Si2(CH3)6). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 ~ 90 nm was achieved at 7.1 mA/㎠ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 cm-1. PL shows the band gap enegry of thin film(2.5 eV) and porous 3C-SiC(2.7 eV).
Abstract
This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS(Hexamethyildisilane: Si2(CH3)6). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 ~ 90 nm was achieved at 7.1 mA/㎠ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 cm-1. PL shows the band gap enegry of thin film(2.5 eV) and porous 3C-SiC(2.7 eV).
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