CMOS Binary Image Sensor Using Double-Tail Comparator with High-Speed and Low-Power Consumption
0
조회
0
다운로드
1
인용
0
참고문헌
키워드
초록
In this paper, we propose a high-speed, low-power complementary metal-oxide semiconductor (CMOS) binary image sensor featuring a gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector based on a double-tail comparator. The GBT photodetector forms a structure in which the floating gate (n+ polysilicon) and body of the PMOSFET are tied, and amplifies the photocurrent generated by incident light. The double-tail comparator compares the output signal of a pixel against a reference voltage and returns a binary signal, and it exhibits improved power consumption and processing speed compared with those of a conventional two-stage comparator. The proposed sensor has the advantages of a high signal processing speed and low power consumption. The proposed CMOS binary image sensor was designed and fabricated using a standard 0.18 µm CMOS process.
Abstract
In this paper, we propose a high-speed, low-power complementary metal-oxide semiconductor (CMOS) binary image sensor featuring a gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector based on a double-tail comparator. The GBT photodetector forms a structure in which the floating gate (n+ polysilicon) and body of the PMOSFET are tied, and amplifies the photocurrent generated by incident light. The double-tail comparator compares the output signal of a pixel against a reference voltage and returns a binary signal, and it exhibits improved power consumption and processing speed compared with those of a conventional two-stage comparator. The proposed sensor has the advantages of a high signal processing speed and low power consumption. The proposed CMOS binary image sensor was designed and fabricated using a standard 0.18 µm CMOS process.
참고문헌 (13)
- B. S. Carlson, "Comparison of Modern CCD and CMOS Image Sensor Technologies and Systems for Low Resolution Imaging", Proc. IEEE Sens., 1(1), pp.171~176 (2002)
- E. R. Fossum, "CMOS Image Sensors : Electronic Camera-On-A-Chip", IEEE Trans. Electron Devices, 44(10), pp.1689~1698 (1997)
- S. Mehta, "CCD or CMOS Image sensor for photography", Int. Conf. Commun. Signal Process. ICCSP 2015, pp.291~294 (2015)
- M. Bigas, "Review of CMOS image sensors", Microelectron. J., 37(5), pp.433~451 (2006)
- C. Y. Chao, "Random Telegraph Noises from the Source Follower, the Photodiode Dark Current, and the Gate-Induced Sense Node Leakage in CMOS Image Sensors", Sensors, 19(24), pp.5447~5465 (2019)
- W. Zhang, "A high gain N-Well", Gate tied PMOSFET image sensor fabricated from a standard CMOS process, 2001, pp.48(6), 1097~1102
- H. H. Lee, "Highly sensitive gate", body-tied metaloxide-semiconductor field-effect transistor-type photodetector with wavelength-selective metal grid structure using standard complementary metal-oxide-semiconductor technology, 2015, pp.27(1), 135~142
- 최병수, "High-Speed CMOS Binary Image Sensor with Gate", Body-Tied PMOSFET-Type Photodetector, 2014, pp.23(5), 332~336[DOI]
- 이준우, "CMOS Binary Image Sensor with Gate", Body-Tied PMOSFET-Type Photodetector for Low-Power and Low-Noise Operation, 2018, pp.27(6), 362~367[DOI]
- 권현우, "Simulation of High-Speed and Low-Power CMOS Binary Image Sensor Based on Gate", Body-Tied PMOSFET-Type Photodetector Using Double-Tail Comparator, 2020, pp.29(2), 82~88[DOI]
- D. Schinkel, "A double-tail latch-type voltage sense amplifier with 18ps setup+hold time", Dig. Tech. Pap. -IEEE Int. Solid-State Circuits Conf., pp.314~316 (2007)
- S. Chaudhari, "Design of efficient double tail comparator for low power", 2015 Int. Conf. Commun. Signal Process. ICCSP 2015, pp.1782~1785 (2015)
- S. Mashhadi, "Analysis and Design of a Low-Voltage LowPower Double-Tail Comparator", IEEE Trans. VLSI Syst., 22(2), pp.343~352 (2014)