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화학기상침착법에 의한 SiCf/SiC 복합체의 제조

Fabrication of SiCf/SiC Composite by Chemical Vapor Infiltration

김원주|김대종|박지연
한국복합재료학회 (The Korean Society For Composite Materials)|2017.04|Composites Research|제30권 제2호|pp. 108-115

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참고문헌

키워드

SiC whisker화학기상침착Chemical vapor infiltration탄화규소섬유복합체탄화규소 휘스커기지상 채움 거동SiCf/SiC compositeMatrix filling behavior
주제분류재료공학

초록

SiCf/SiC 복합체를 제조하는 공정들 중에서 화학기상 침착(Chemical Vapor Infiltration) 공정은 저온에서 실형상이나 복잡한 형상을 제조할 수 있고, 기지상의 미세구조를 제어할 수 있으며, 고순도를 지닌 SiCf/SiC 복합체를 제조할 수 있는 효과적인 방법이다. 그러나 잔유 기공을 가지며 공정시간이 긴 단점이 있다. 기공률을 줄이고효과적인 기지상 채움을 위하여 휘스커(whisker) 성장과 기지상 채움공정을 연속하여 수행하는 whisker growing assisted 화학기상침착공정이 개발되었다. 기지상 채움 전에 프리폼에 SiC 휘스커를 미리 성장시키면 섬유간이나 번들간에 존재하는 큰 기공을 작게 분할하여 기지상 채움 효율을 증진할 수 있다. 본 논문에서는 SiCf/SiC 복합체 제조를위한 화학기상침착법공정의 기초와 일반적인 화학기상침착공정과 whisker growing assisted 화학기상침착공정으로제조한 SiCf/SiC 복합체의 실험결과들을 간략히 서술하였다.

Abstract

Among several fabrication processes of SiCf/SiC composites, the chemical vapor infiltration (CVI) process has attractive advantages in manufacturing complex net-or near-net-shape components at relatively low temperatures, easily controlling the microstructure of the matrix and obtaining the highest SiC purity level. However, it has disadvantages in that the ratio of residual pores in matrix is higher than other processes and processing time is relatively long. To reduce the residual porosity, the whisker-growing-assisted CVI process, which is composed of whisker growth and matrix filling steps has been developed. The whiskers grown before matrix filling may serve to divide the large natural pores between the fibers or bundles so that the matrix can be effectively filled into the finely divided pores. In this paper, the fundamentals of the CVI process for preparation of SiCf/SiC composites and some experimental results prepared by CVI and whisker-growing-assisted CVI processes are briefly introduced.

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