저온분사법에 의해 제조된 Cu-Ga 타겟의 스퍼터링 특성평가
Characterization of Films Sputtered with the Cu-Ga Target Prepared by the Cold Spray Process
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The microstructural properties and electrical characteristics of sputtering films deposited with a Cu-Ga target are analyzed. The Cu-Ga target is prepared using the cold spray process and shows generally uniform composition distributions, as suggested by secondary ion mass spectrometer (SIMS) data. Characteristics of the sputtered Cu-Ga films are investigated at three positions (top, center and bottom) of the Cu-Ga target by X-ray diffraction (XRD), SIMS, 4-point probe and transmission electron microscopy (TEM) analysis methods. The results show that the Cu-Ga films are composed of hexagonal and unknown phases, and they have similar distributions of composition and resistivity at the top, center, and bottom regions of the Cu-Ga target. It demonstrates that these films have uniform properties regardless of the position on the Cu-Ga target. In conclusion, the cold spray process is expected to be a useful method for preparing sputter targets.
Abstract
The microstructural properties and electrical characteristics of sputtering films deposited with a Cu-Ga target are analyzed. The Cu-Ga target is prepared using the cold spray process and shows generally uniform composition distributions, as suggested by secondary ion mass spectrometer (SIMS) data. Characteristics of the sputtered Cu-Ga films are investigated at three positions (top, center and bottom) of the Cu-Ga target by X-ray diffraction (XRD), SIMS, 4-point probe and transmission electron microscopy (TEM) analysis methods. The results show that the Cu-Ga films are composed of hexagonal and unknown phases, and they have similar distributions of composition and resistivity at the top, center, and bottom regions of the Cu-Ga target. It demonstrates that these films have uniform properties regardless of the position on the Cu-Ga target. In conclusion, the cold spray process is expected to be a useful method for preparing sputter targets.
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