셀렌화 공정을 제외한 RF 마그네트론 스퍼터링으로 제작된 Cu(In,Ga)Se2 박막의 구조 및 전기적 특성
Structural and Electrical Properties of Cu(In,Ga)Se2 Thin Films Prepared by RF Magnetron Sputtering without Selenization
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A one-step route was developed to fabricate Cu(In,Ga)Se2 (CIGS) thin films by radio frequency (RF) magnetron sputtering from a single quaternary CuIn0.75Ga0.25Se2 target. The effects of the substrate temperatures on the structural and electrical properties of the CIGS layers were investigated by X-ray diffraction (XRD),field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS) and Hall effect measurements. All the deposited films showed a preferential orientation along the (112) direction. The films deposited at 300oC and 400oC revealed that chalcopyrite main (112) peak and weak prominent peaks of (220)/(204) and (312)/(116), indicating polycrystalline structures. The element ratio of the deposited film at 300oC were almost the same as the near-optimum value. The carrier concentration of the films decreased with increasing substrate temperatures.
Abstract
A one-step route was developed to fabricate Cu(In,Ga)Se2 (CIGS) thin films by radio frequency (RF) magnetron sputtering from a single quaternary CuIn0.75Ga0.25Se2 target. The effects of the substrate temperatures on the structural and electrical properties of the CIGS layers were investigated by X-ray diffraction (XRD),field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS) and Hall effect measurements. All the deposited films showed a preferential orientation along the (112) direction. The films deposited at 300oC and 400oC revealed that chalcopyrite main (112) peak and weak prominent peaks of (220)/(204) and (312)/(116), indicating polycrystalline structures. The element ratio of the deposited film at 300oC were almost the same as the near-optimum value. The carrier concentration of the films decreased with increasing substrate temperatures.
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