광화학적 방법을 통한 InP계 양자점 표면결함 부동태화 연구
Study on Surface-defect Passivation of InP System Quantum Dots by Photochemical Method
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In this study, the surface passivation process for InP-based quantum dots (QDs) is investigated. Surface coating is performed with poly(methylmethacrylate) (PMMA) and thioglycolic acid. The quantum yield (QY) of a PMMA-coated sample slightly increases by approximately 1.3% relative to that of the as-synthesized InP/ZnS QDs. The QYs of the uncoated and PMMA-coated samples drastically decrease after 16 days because of the high defect state density of the InP-based QDs. PMMA does not have a significant effect on the defect passivation. Thioglycolic acid is investigated in this study for the effective surface passivation of InP-based QDs. Surface passivation with thioglycolic acid is more effective than that with the PMMA coating, and the QY increases from 1.7% to 11.3%. ZnS formed on the surface of the InP QDs and S in thioglycolic acid show strong bonding property. Additionally, the QY is further increased up to 21.0% by the photochemical reaction. Electron–hole pairs are formed by light irradiation and lead to strong bonding between the inorganic and thioglycolic acid sulfur. The surface of the InP core QDs, which does not emit light, is passivated by the irradiated light and emits green light after the photochemical reaction.
Abstract
In this study, the surface passivation process for InP-based quantum dots (QDs) is investigated. Surface coating is performed with poly(methylmethacrylate) (PMMA) and thioglycolic acid. The quantum yield (QY) of a PMMA-coated sample slightly increases by approximately 1.3% relative to that of the as-synthesized InP/ZnS QDs. The QYs of the uncoated and PMMA-coated samples drastically decrease after 16 days because of the high defect state density of the InP-based QDs. PMMA does not have a significant effect on the defect passivation. Thioglycolic acid is investigated in this study for the effective surface passivation of InP-based QDs. Surface passivation with thioglycolic acid is more effective than that with the PMMA coating, and the QY increases from 1.7% to 11.3%. ZnS formed on the surface of the InP QDs and S in thioglycolic acid show strong bonding property. Additionally, the QY is further increased up to 21.0% by the photochemical reaction. Electron–hole pairs are formed by light irradiation and lead to strong bonding between the inorganic and thioglycolic acid sulfur. The surface of the InP core QDs, which does not emit light, is passivated by the irradiated light and emits green light after the photochemical reaction.
참고문헌 (19)
- S. A. Empedocles, , Science, 278, pp.2114~ (1997)
- S. K. Poznyak, , Nano Lett., 4, pp.693~ (2004)
- A. Narayanaswamy, , ACS Nano, 3, pp.2539~ (2009)
- M. Yu, , Appl. Phys. Lett., 88, pp.231910~ (2006)
- 엄누시아, "Injection 온도 및 합성시간에 따른 CdSe 양자점 합성 및 특성", 한국재료학회지, 22(3), pp.140~144 (2012), 한국재료학회
- T. A. DeTemple, , IEEE J. Quantum Electron., 29, pp.1246~ (1993)
- P. F. Trwoga, , J. Appl. Phys., 83, pp.3789~ (1998)
- B. O. Dabbousi, , J. Phys. Chem. B, 101, pp.9463~ (1997)
- S. A. Majetich, , J. Phys. Chem., 97, pp.8727~ (1993)
- A. M. Derfus, , Nano Lett., 4, pp.11~ (2004)
- Y. T. Kwon, , Surf. Coat. Technol., 259, pp.83~ (2014)
- Y. T. Kwon, , J. Nanosci. Nanotechnol., 14, pp.7636~ (2014)
- 박현수, "장시간 안정성을 위한 CdSe", ZnS 양자점의 표면처리 기술, 2017, pp.24(1), 1~5[DOI]
- S. Y. Joo, , J. Appl. Phys., 121, pp.223102~ (2017)
- H. Fu, , Phys. Rev. B, 56, pp.1496~ (1997)
- 서한욱, "InP 코어 합성온도에 따른 InP", ZnS의 코어, 한국분말야금학회지, pp.2017, 24(4)[DOI]
- W. W. Zhao, , Anal. Chem., 84, pp.917~ (2011)
- I. C. Baek, , J. Colloid Interface Sci., 310, pp.163~ (2007)
- T. Nishio, , Biophys. Chem., 104, pp.501~ (2003)