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Comparisons of Interfacial Reaction Characteristics on Flip Chip Package with Cu Column BOL Enhanced Process (fcCuBE®) and Bond on Capture Pad (BOC) under Electrical Current Stressing

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초록

An innovative packaging solution, Flip Chip with Copper (Cu) Column bond on lead (BOL) Enhanced Process(fcCuBE®) delivers a cost effective, high performance packaging solution over typical bond on capture pad (BOC)technology. These advantages include improved routing efficiency on the substrate top layer thus allowing conversionfunctionality; furthermore, package cost is lowered by means of reduced substrate layer count and removal of solder onpad (SOP). On the other hand, as electronic packaging technology develops to meet the miniaturization trend fromconsumer demand, reliability testing will become an important issue in advanced technology area. In particular,electromigration (EM) of flip chip bumps is an increasing reliability concern in the manufacturing of integrated circuit(IC) components and electronic systems. This paper presents the results on EM characteristics on BOL and BOC structuresunder electrical current stressing in order to investigate the comparison between two different typed structures. EM datawas collected for over 7000 hours under accelerated conditions (temperatures: 125oC, 135oC, and 150oC and stress current:300 mA, 400 mA, and 500 mA). All samples have been tested without any failures, however, we attempted to findmorphologies induced by EM effects through cross-sectional analysis and investigated the interfacial reactioncharacteristics between BOL and BOC structures under current stressing. EM damage was observed at the solder jointof BOC structure but the BOL structure did not show any damage from the effects of EM. The EM data indicates thatthe fcCuBE® BOL Cu column bump provides a significantly better EM reliability.

Abstract

An innovative packaging solution, Flip Chip with Copper (Cu) Column bond on lead (BOL) Enhanced Process(fcCuBE®) delivers a cost effective, high performance packaging solution over typical bond on capture pad (BOC)technology. These advantages include improved routing efficiency on the substrate top layer thus allowing conversionfunctionality; furthermore, package cost is lowered by means of reduced substrate layer count and removal of solder onpad (SOP). On the other hand, as electronic packaging technology develops to meet the miniaturization trend fromconsumer demand, reliability testing will become an important issue in advanced technology area. In particular,electromigration (EM) of flip chip bumps is an increasing reliability concern in the manufacturing of integrated circuit(IC) components and electronic systems. This paper presents the results on EM characteristics on BOL and BOC structuresunder electrical current stressing in order to investigate the comparison between two different typed structures. EM datawas collected for over 7000 hours under accelerated conditions (temperatures: 125oC, 135oC, and 150oC and stress current:300 mA, 400 mA, and 500 mA). All samples have been tested without any failures, however, we attempted to findmorphologies induced by EM effects through cross-sectional analysis and investigated the interfacial reactioncharacteristics between BOL and BOC structures under current stressing. EM damage was observed at the solder jointof BOC structure but the BOL structure did not show any damage from the effects of EM. The EM data indicates thatthe fcCuBE® BOL Cu column bump provides a significantly better EM reliability.

참고문헌 (9)

  1. N. Islam, , Electronic System Technologies Conference & Exhibition
  2. Raj Pendse, "US Patents # US7700407, US7368817, US7,901,983, US7,973,406, US8,076,232 and US8,188,598, “Bump-onlead flip chip interconnection", ~ (2004)
  3. S. Rao, , IEEE Electronic Components & Technology Conference, Las Vegas, NV, USA, pp.629~ (2013)
  4. J.M. Kim, , J. Electron. Mater, 41, pp.791~ (2012)
  5. M. H. Jeong, , Microelectron. Eng, 89, pp.50~ (2012)
  6. R. Labie, , IEEE Electronic Components & Technology Conference, Lake Buena Vista, FL, USA, pp.312~ (2011)
  7. Y. Orii, , IEEE Electronic Components & Technology Conference, Lake Buena Vista, FL, USA, pp.340~ (2011)
  8. J. W. Nah, , J. Appl. Phys, 100, pp.123513~ (2006)
  9. W. J. Deng, , IEEE Electronic Components & Technology Conference, Lake Buena Vista, FL, USA, pp.114~ (2011)

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