플립칩 본딩된 Sn-3.5Ag-0.5Cu 솔더범프의 electromigration 거동
Electromigration Behavior of the Flip-Chip Bonded Sn-3.5Ag-0.5Cu Solder Bumps
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참고문헌
초록
상부 칩과 하부 기판이 모두 Si으로 구성되어 있는 플립칩 패키지 시편을 제조하여 130~160oC의 온도 범위에서 3~4×104 A/cm2의 전류밀도를 가하여 주면서 플립칩 본딩된 Sn-3.5Ag-0.5Cu 솔더범프의 electromigration 거동을 분석하였다. Sn-3.5Ag-0.5Cu 솔더범프의 cathode로부터 anode로의 electromigration에 의해 Cu UBM이 완전히 소모되어 cathode 부위에서 void가 형성됨으로써 파괴가 발생하였다. Sn-3.5Ag-0.5Cu 솔더범프의 electromigration에 대한 활성화 에너지는 3×104 A/cm2의 전류밀도에서는 0.61 eV, 3.5×104 A/cm2의 전류밀도에서는 0.63 eV, 4×104 A/cm2의 전류밀도에서는 0.77 eV로 측정되었다.
Abstract
Electromigration of Sn-3.5Ag-0.5Cu solder bumps was investigated with current densities of 3~4×10 A/cm at temperatures of 130~160C using flip chip specimens which consisted of upper Si chip and lower Si substrate. Electromigration failure of the Sn-3.5Ag-0.5Cu solder bump occurred with complete consumption of Cu UBM and void formation at cathode side of the solder bump. The activation energies for electromigration of the Sn-3.5Ag-0.5Cu solder bump were measured as 0.61 eV at current density of 3×10 A/cm, 0.63 eV at 3.5×10 A/cm, and 0.77 eV at 4×10 A/cm, respectively.
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