전기화학적 정전위 활성화를 사용한 수소 제거에 의한 AlGaN기반의 UV-C 발광 다이오드의 p-형 활성화
p-Type Activation of AlGaN-based UV-C Light-Emitting Diodes by Hydrogen Removal using Electrochemical Potentiostatic Activation
0
조회
0
다운로드
0
인용
0
참고문헌
키워드
초록
AlGaN 기반 UV-C 발광다이오드(LEDs)에 전기화학적 전위차 활성화(EPA)에 의한 p-형 활성화를 진행하였다. 높은 저항과 낮은 전도도를 유발하는 중성 Mg-H의 복합체의 수소원자를 EPA를 이용하여 제거하여 p-형 활성화 효율을높였다. 중성 Mg-H 복합체는 주요 매개 변수인 용액, 전압, 시간에 의해 Mg과 H+로 분해되며, 2차 이온질량 분광법(SIMS) 분석을 통하여 개선된 정공 캐리어의 농도를 확인할 수 있었다. 이 메커니즘은 결국 내부 양자효율(IQE)의 증가, 광 추출 효율 향상, 역 전류 영역의 누설전류 값 개선, 접합 온도 개선 등을 이루어 결과적으로 UV-C LED의 수명을 향상시켰다. 체계적인 분석을 위해 SIMS, Etamax IQE 시스템, 적분구, 전류-전압(I-V) 측정 등을 사용하였으며, 그 결과를기존의 N2-열 처리 방법과 비교 평가하였다.
Abstract
AlGaN-based UV-C light-emitting diodes (LEDs) were applied for p-type activation by electrochemical potentiostatic activation (EPA). The p-type activation efficiency was increased by removing hydrogen atoms through EPA treatment using a neutral Mg-H complex that causes high resistance and low conductivity. A neutral Mg-H complex is decomposed into Mg and H+ depending on the key parameters of solution, voltage, and time. The improved hole carrier concentration was confirmed by secondary ion mass spectroscopy (SIMS) analysis. This mechanism eventually improved the internal quantum efficiency (IQE), the light extraction efficiency, the leakage current value in the reverse current region, and junction temperature, resulting in better UV-C LED lifetime. For systematic analysis, SIMS, Etamax IQE system, integrating sphere, and current-voltage measurement system were used, and the results were compared with the existing N2-annealing method.
참고문헌 (25)
- S. J. Choi, "Deep-UV Curing of Poly (4-Vinyl Phenol) Gate Dielectric for Hysteresis-free Organic Thin-film Transistors", IEEE Electron Device Letters, 30(5), pp.454~ (2009)
- K. Song, "Application of Ultraviolet Light-emitting Diodes (UV-LEDs) for Water Disinfection:A Review", Water Research, 94, pp.341~ (2016)
- M. Mori, "Effects of Ultraviolet LED on Bacteria", World Congress on Medical Physics and Biomedical Engineering, 2006, pp.1327~ (2007)
- S. Zlotnik, "Growth and Thermal Annealing for Acceptor Activation of p-type (Al) GaN Epitaxial Structures: Technological Challenges and Risks", Applied Surface Science, 488, pp.688~ (2019)
- M. Crawford, "Materials challenges of AlGaN-based UV Optoelectronic Devices", Semiconductors and Semimetals, 96, pp.3~ (2017)
- H. Hirayama, "Recent Progress and Future Prospects of AlGaNBased High-efficiency Deep-ultraviolet Light-emitting Diodes", Japanese Journal of Applied Physics, 53(10), pp.100209~ (2014)
- M. Jo, "Enhanced Light Extraction in 260 nm Light-emitting Diode with a Highly Transparent p-AlGaN Layer", Applied Physics Express, 9(1), pp.012102~ (2015)
- M. Kneissl, "III-Nitride Ultraviolet Emitters" (2016), Springer
- M. Shatalov, "High Power AlGaN Ultraviolet Light Emitters", Semiconductor Science and Technology, 29(8), pp.084007~ (2014)
- U. Kaufmann, "Hole Conductivity and Compensation in Epitaxial GaN: Mg Layers", Physical Review B, 62(16), pp.10867~ (2000)
- H. Amano, "P-type Conduction in Mg-doped GaN Treated with Low-energy Electron Beam Irradiation (LEEBI)", Japanese Journal of Applied Physics, 28(12A), pp.L2112~ (1989)
- S. J. Chang, "Acceptor Activation of Mg-doped GaN by Microwave Treatment", Applied Physics Letters, 78(3), pp.312~ (2001)
- Y. J. Lin, "Excimer-laser-induced Activation of Mg-doped GaN Layers", Applied Physics Letters, 84(14), pp.2515~ (2004)
- S. Nakamura, "Thermal Annealing Effects on p-type Mg-doped GaN Films", Japanese Journal of Applied Physics, 31(2B), pp.L139~ (1992)
- 방승완, "p-type GaN의 Activation을 통한 광전기화학적 특성 향상", 마이크로전자 및 패키징학회지, 24(4), pp.59~63 (2017), 한국마이크로전자및패키징학회
- N. Posthuma, "Impact of Mg Outdiffusion and Activation on the p-GaN Gate HEMT Device Performance", 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp.95~ (2016)
- Y. L. Chang, "Study of Mg Diffusion During Metalorganic Chemical Vapor Deposition of GaN and AlGaN", Applied Physics Letters, 74(5), pp.688~ (1999)
- 이태영, "접합 소재에 따른 고출력 플립칩 LED 패키지 특성 연구", 마이크로전자 및 패키징학회지, 21(1), pp.1~6 (2014), 한국마이크로전자및패키징학회[DOI]
- Y. Xi, "Junction–temperature Measurement in GaN Ultraviolet Light-emitting Diodes Using Diode Forward Voltage Method", Applied Physics Letters, 85(12), pp.2163~ (2004)
- 장문환, "Assessment Methodology of Junction Temperature of Light-Emitting Diodes (LEDs)", 마이크로전자 및 패키징학회지, 23(3), pp.7~14 (2016), 한국마이크로전자및패키징학회
- J. I. Shim, "Measuring the Internal Quantum Efficiency of Light-emitting Diodes: Towards Accurate and Reliable Room-temperature Characterization", Nanophotonics, 7(10), pp.1601~ (2018)
- D. Emin, "Phonon-assisted Jump Rate in Noncrystalline Solids", Physical Review Letters, 32(6), pp.303~ (1974)
- D. C. Look, "Deep‐center Hopping Conduction in GaN", Journal of Applied Physics, 80(5), pp.2960~ (1996)
- J. S. Kwak, "Temperature-dependent Contact Resistivity of the Nonalloyed Ohmic Contacts to p-GaN", Journal of Applied Physics, 95(10), pp.5917~5919 (2004)
- A. Armstrong, "Deep Level Investigation of p-type GaN Using a Simple Photocurrent Technique", Journal of Applied Physics, 105(4), pp.043712~ (2009)