혼합소스 HVPE 방법에 의한 전력 반도체 소자용 p형 AlN 에피층 성장
p-Type AlN epilayer growth for power semiconductor device by mixed-source HVPE method
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초록
본 논문에서는 전력 반도체 소자용 Mg-doped AlN 에피층을 혼합 소스 수소화물 기상 에피택시 방법에 의해 성장하였다. p형 재료로는 Mg을 사용하였다. 소자응용을 위한 기초 기판으로서 역할을 하기 위하여 GaN 에피층이 성장된기판과 GaN 에피층이 성장되어 패턴이 형성된 사파이어 기판 위에 Mg-doped AlN 에피층을 선택 성장하였다. Mg-dopedAlN 에피층의 표면과 결정 구조는 FE-SEM 및 HR-XRD에 의해 조사하였다. XPS 스펙트럼과 라만 스펙트럼 결과로부터혼합소스 HVPE 방법에 의해 성장된 Mg-doped AlN 에피층은 전력소자 등에 응용이 가능할 것으로 판단된다.
Abstract
In this paper, Mg-doped AlN epilayers for power semiconductor devices are grown by mixed-source hydridevapor phase epitaxy. Magnesium is used as p-type dopant material in the grown AlN epilayer. The AlN epilayers on theGaN-templated sapphire substrate and GaN-templated-patterned sapphire substrate (PSS), respectively, as the base substratesfor device application, were selectively grown. The surface and the crystal structures of the AlN epilayers were investigatedby field emission scanning electron microscopy (FE-SEM) and high-resolution-X-ray diffraction (HR-XRD). From the X-rayphotoelectron spectroscopy (XPS) and Raman spectra results, the p-type AlN epilayers grown by using the mixed-sourceHVPE method could be applied to power devices.
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