신축성 전자패키징을 위한 CNT-Ag 복합패드에서의 플립칩 공정
Flip Chip Process on CNT-Ag Composite Pads for Stretchable Electronic Packaging
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신축성 전자패키징 기술개발을 위한 기초연구로서 Cu/Sn 범프에 CNT-Ag 복합패드를 형성한 칩을 이방성 전도접착제를 사용하여 플립칩 본딩한 후, CNT-Ag 복합패드의 유무 및 본딩압력에 따른 플립칩 접속부의 접속저항을 측정하였다. CNT-Ag 복합패드가 형성된 Cu/Sn 칩 범프를 25MPa과 50MPa의 본딩압력으로 플립칩 본딩한 시편들은 접속저항이 너무 높아 측정이 안되었으며, 100MPa의 본딩압력으로 플립칩 본딩한 시편은 213 mΩ의 평균 접속저항을 나타내었다. 이에 비해 CNT-Ag 복합패드가 없는 Cu/Sn 칩 범프를 사용하여 25MPa, 50 MPa 및 100 MPa의 본딩압력으로 플립칩본딩한 시편은 각기 1370 mΩ, 372 mΩ 및 112 mΩ의 평균 접속저항을 나타내었다.
Abstract
As a basic research to develop stretchable electronic packaging technology, CNT-Ag composite pads were formedon top of Cu/Sn chip bumps and flip-chip bonded using anisotropic conductive adhesive. Average contact resistances of theflip-chip joints were measured with respect to bonding pressure and presence of the CNT-Ag composite pads. When Cu/Snchip bumps with CNT-Ag composite pads were flip-chip bonded to substrate Cu pads at 25MPa or 50 MPa, contact resistancewas too high to measure. The specimen processed by flip-chip bonding the Cu/Sn chip bumps with CNT-Ag composite padsto the substrate Cu pads exhibited an average contact resistance of 213 mΩ. On the other hand, the flip-chip specimensprocessed by bonding Cu/Sn chip bumps without CNT-Ag composite pads to substrate Cu pads at 25MPa, 50MPa, and100MPa exhibited average contact resistances of 370 mΩ, 372 mΩ, and 112 mΩ, respectively.
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