저온 Cu 하이브리드 본딩을 위한 SiCN의 본딩 특성 리뷰
A Review on the Bonding Characteristics of SiCN for Low-temperature Cu Hybrid Bonding
0
조회
0
다운로드
4
인용
0
참고문헌
키워드
초록
디바이스 소형화의 한계에 다다르면서, 이를 극복할 수 있는 방안으로 차세대 패키징 기술의 중요성이 부각되고 있다. 병목 현상을 해결하기 위해 2.5D 및 3D 인터커넥트 피치의 필요성이 커지고 있는데, 이는 신호 지연을 최소화할 수 있도록 크기가 작고, 전력 소모가 적으며, 많은 I/O를 가져야 하는 등의 요구 사항을 충족해야 한다. 기존 솔더 범프의 경우 미세화 한계와 고온 공정에서 녹는 등의 신뢰성 문제가 있어, 하이브리드 본딩 기술이 대안책으로 주목받고 있으며 최근 Cu/SiO2 구조의 문제점을 개선하고자 SiCN에 대한 연구 또한 활발히 진행되고 있다. 해당 논문에서는 Cu/SiO2 구조 대비 Cu/SiCN이 가지는 이점을 전구체, 증착 온도 및 기판 온도, 증착 방식, 그리고 사용 가스 등 다양한 증착 조건에 따른 SiCN 필름의 특성 변화 관점에서 소개한다. 또한, SiCN-SiCN 본딩의 핵심 메커니즘인 Dangling bond와 OH 그룹의 작용, 그리고 플라즈마 표면 처리 효과에 대해 설명함으로써 SiO2와의 차이점에 대해 기술한다. 이를 통해, 궁극적으로 Cu/SiCN 하이브리드 본딩 구조 적용 시 얻을 수 있는 이점에 대해 제시하고자 한다.
Abstract
The importance of next-generation packaging technologies is being emphasized as a solution as the miniaturization of devices reaches its limits. To address the bottleneck issue, there is an increasing need for 2.5D and 3D interconnect pitches. This aims to minimize signal delays while meeting requirements such as small size, low power consumption, and a high number of I/Os. Hybrid bonding technology is gaining attention as an alternative to conventional solder bumps due to their limitations such as miniaturization constraints and reliability issues in high-temperature processes. Recently, there has been active research conducted on SiCN to address and enhance the limitations of the Cu/ SiO2 structure. This paper introduces the advantages of Cu/SiCN over the Cu/SiO2 structure, taking into account various deposition conditions including precursor, deposition temperature, and substrate temperature. Additionally, it provides insights into the core mechanisms of SiCN, such as the role of Dangling bonds and OH groups, and the effects of plasma surface treatment, which explain the differences from SiO2. Through this discussion, we aim to ultimately present the achievable advantages of applying the Cu/SiCN hybrid bonding structure.
참고문헌 (39)
- R. Wenbiao, "Effects of pattern characteristics on copper CMP", Journal of Semiconductors, 30(4), pp.046001~ (2009)
- J. -J. Ong, "Low-temperature Cu", SiO2 hybrid bonding with low contact resistance using(111)-oriented Cu surfaces, 2022, pp.15(5), 1888~
- 서한결, "Cu-SiO2 하이브리드 본딩", 마이크로전자 및 패키징학회지, 27(1), pp.17~24 (2020), 한국마이크로전자및패키징학회
- 김희주, "인공지능 반도체 및 패키징 기술 동향", 마이크로전자 및 패키징학회지, 30(3), pp.11~19 (2023), 한국마이크로전자및패키징학회
- 장예진, "3D 패키징을 위한 Scallop-free TSV와 Cu Pillar 및 하이브리드 본딩", 마이크로전자 및 패키징학회지, 29(4), pp.1~8 (2022), 한국마이크로전자및패키징학회
- C. Ventosa, "Hydrophilic low-temperature direct wafer bonding", Journal of Applied Physics, 104(12), pp.123524~ (2008)
- S. W. Kim, "Permanent wafer bonding in the low temperature by using various plasma enhanced chemical vapour deposition dielectrics", 3DIC, 7334576 (2015)
- S. W. Kim, "International 3D Systems Integration Conference (3D-IC)", TS7, 2(2015) (2015)
- J. Robertson, "Diamond-like amorphous carbon", Materials science and engineering : R : Reports, 37(4-6), pp.129~281 (2002)
- L. Peng, "Investigation of Paramagnetic Defects in SiCN and SiCO-based Wafer Bonding", 2020 IEEE 22nd Electronics Packaging Technology Conference (EPTC), pp.9315054~ (2020)
- "Interconnect" (2011)[URL]
- S. -W. Kim, "Novel Cu", SiCN surface topography control for 1 μm pitch hybrid wafer-to-wafer bonding, 2020 (2020), 00046~
- S. -A. Chew, "00nm pitch Cu", SiCN wafer-to-wafer hybrid bonding, 2022 (2022), 10013108~
- E. Beyne, "Scalable, sub 2μm pitch, Cu", SiCN to Cu, 2017IEEE International Electron Devices Meeting(IEDM), pp.2017, 8268486[DOI]
- A. Roshanghias, "3D Integration via D2D Bump-Less Cu Bonding with Protruded and Recessed Topographies", ECS Journal of Solid State Science and Technology, 12(8), pp.084001~ (2023)
- Iacovo, "The unique properties of SiCN as bonding material for hybrid bonding", 2021 7th International Workshop on Low Temperature Bonding for 3D Integration(LTB-3D), pp.9598192~ (2021)
- T. Ueda, "A novel role for SiCN to suppress H2O outgas from TEOS oxide films in hybrid bonding", IEEE International Interconnect Technology Conference(IITC), pp.7968945~ (2017)
- F. Inoue, "Influence of Composition of SiCN Film for Surface Activated Bonding", ECS Transactions, 86(5), pp.159~ (2018)
- S. Chattopadhyay, "Thermal diffusivity in amorphous silicon carbon nitride thin films by the traveling wave technique", Applied Physics Letters, 79(3), pp.332~334 (2001)
- Q. -Y. Tong, "Thickness Considerations in Direct Silicon Wafer Bonding", Journal of The Electrochemical Society, 142(11), pp.3975~3979 (1995)
- F. Nagano, "Film characterization of low-temperature silicon carbon nitride for direct bonding applications", ECS Journal of Solid State Science and Technology, 9(12), pp.123011~ (2020)
- X. F. Brun, "Characterization of 300 mm Low Temperature SiCN PVD Films for Hybrid Bonding application", 2023 IEEE 73rd Electronic Components and Technology Conference(ECTC), pp.00098~ (2023)
- E. Xie, "Preparation and characterization of SiCN films", Optical Materials, 23(1-2), pp.151~156 (2003)
- K. B. Sundaram, "Deposition and optical studies of silicon carbide nitride thin films", Thin Solid Films, 370(1-2), pp.151~154 (2000)
- X. -C. Xiao, "Structural analysis and microstructural observation of SiCxNy films prepared by reactive sputtering of SiC in N2 and Ar", Applied Surface Science, 156(1-4), pp.155~ (2000)
- W. Zhang, "Influence of temperature on the properties of SiCxNy : H films prepared by plasma-enhanced chemical vapour deposition", Materials Science and Engineering : B, 26(2-3), pp.133~ (1994)
- A. Bendeddouche, "Structural characterization of amorphous SiC x N y chemical vapor deposited coatings", Journal of Applied Physics, 81(9), pp.6147~ (1997)
- W. F. A. Besling, "Laser-induced chemical vapor deposition of nanostructured silicon carbonitride thin films", Journal of applied physics, 83(1), pp.544~ (1998)
- R. Alexandrescu, "Composite ceramic powders obtained by laser induced reactions of silane and amines", Journal of materials research, 6(11), pp.2442~ (1991)
- Q. -Y. Tong, "Low temperature direct wafer bonding", Journal of Microelectromechnical Systems, 3(1), pp.29~35 (1994)
- Q. -Y. Tong, "The role of surface chemistry in bonding of standard silicon wafers", Journal of The Electrochemical Society, 144(1), pp.384~389 (1997)
- C. Sabbione, "Low temperature direct bonding mechanisms of tetraethyl orthosilicate based silicon oxide films deposited by plasma enhanced chemical vapor deposition", Journal of Applied Physics, 112(6), pp.063501~ (2012)
- L. Peng, "Advances in SiCN-SiCN bonding with high accuracy wafer-to-wafer (w2w) stacking technology", IEEE International Interconnect Technology Conference(IITC) (2018)
- D. Y. C. Lie, "Si", SiGe heterostructures for Si-based nanoelectronics, 2001, pp.2, 1~65
- Chen, C., "The affinity of Si–N and Si–C bonding in amorphous silicon carbon nitride(a-SiCN)thin film", Diamond and Related Materials, 14(3-7), pp.1126~1130 (2005)
- H. C. Lo, "Bonding characterization and nano-indentation study of the amorphous SiCxNy films with and without hydrogen incorporation", Diamond and related materials, 10(9-10), pp.1916~ (2001)
- F. Nagano, "Origin of Voids at the SiO2", SiO2 and SiCN, ECS Journal of Solid State Science and Technology, pp.2023, 12(3)[DOI]
- L. Peng, "Development of multi-stack dielectric wafer bonding", IEEE 17th International Conference on Electronic Packaging Technology(ICEPT), pp.7583082~ (2016)
- S. Son, "Characteristics of plasma-activated dielectric film surfaces for direct wafer bonding", 2020 IEEE 70th Electronic Components and Technology Conference(ECTC), pp.00315~ (2020)