유도결합 플라즈마-마그네트론 스퍼터링 방법을 이용한 저온 폴리실리콘 제조
Fabrication of Low Temperature Poly-Silicon by Inductively Conpled Plasma Assisted Magnetron Sputtering
0
조회
0
다운로드
1
인용
0
참고문헌
초록
Abstract
Polycrystalline silicon thin films were deposited by inductively coupled plasma (ICP) assisted magnetron sputtering using a gas mixture of Ar and H2 on a glass substrate at 250oC. At constant Ar mass flow rate of 10sccm, the working pressure was changed between 10mTorr and 70mTorr with changing H2 flow rate. The effects of RF power applied to ICP coil and Ar/H2 gas mixing ratio on the properties of the deposited Si films were investigated.The crystallinity was evaluated by both X-ray diffraction and Raman spectroscopy. From the results of Raman spectroscopy, the crystallinity was improved as hydrogen mixing ratio was increased up to Ar/H2=10/16sccm; the maximum crystalline fraction was 74% at this condition. When RF power applied to ICP coil was increased, the crystallinity was also increased around 78%. In order to investigate the surface roughness of the deposited films, Atomic Force Microscopy was used.
참고문헌 (9)
- Jang, J, "Thin Solid Films", Thin Solid Films, 383, pp.34~38 (2001)
- Voutsas, A. T, "Applied Surface Science", Applied Surface Science, 208, pp.250~262 (2003)
- Matsuda, A, "Solids", Solids, 59, pp.767~ (1983)
- Conde, J. P, "Jpn. J. Appl. Phys., Part 1", Jpn. J. Appl. Phys., Part 1, 36 (1997)
- Feng, Y, "Thin Solid Films", Thin Solid Films, 595, pp.213~216 (2001)
- Jang, J, "Vacuum", Vacuum, 51 (1998)
- Joo, J. H, "J. Vac. Sci. Technol. A", J. Vac. Sci. Technol. A, 18(4), pp.2006~2011 (2000)
- Gerbi, J. E, "J. App. Phys.", J. App. Phys., 99, pp.1465~ (2001)
- Matsuda, Akihisa, "Thin Solid Films", Thin Solid Films, 337, pp.1~6 (1999)