폴리머 기판상에 합성된 저온 ITO 박막에 미치는 Ar + H2 플라즈마의 영향
The effect of Ar + H2 Plasma on the Low Temperature ITO Film Synthesized on Polymer
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Abstract
Indium tin oxide (ITO) films were synthesized on polymer (PES, polyethersulfone) at room temperature by pulsed DC magnetron sputtering. By the control of introducing hydrogen to argon atmosphere, the resistivity of ITO films was obtained at 5.2710-4 Wcm without substrate heating in comparison with 2.65 10-3 Wcm under hydrogen free condition. ITO film synthesized at Ar condition was changed from amorphous to crystalline. These result from the enhancement of electron temperature in Ar + H2 plasma, which induces the increase of ionization of target materials and argon. The dominant increase of ions such as In II and O II and neutral Sn I was monitored by optical emission spectroscopy (OES). Thermal energy required for the crystalline film formation is compensated by kinetic energy transfer through ion bombardments to substrate.
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