논문KCI 등재
Effect of Ga, S Addition in CuInSe2 for Solar Cell Applications
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참고문헌
주제분류기계공학
초록
Abstract
Gallium or sulphur additions in CuInSe2 were prepared using RF magnetron sputtering and pulsed laser deposition respectively. All of the observed thin films shows a chalcopyrite structure with the S and Ga addition increases the favourable (112) peak. The optical absorption coefficients were slightly decreased. The energy band gap of films could be shifted from 1.04 to 1.68 eV by adjusting the mole ratio of S/(S+Se) and Ga/(In+Ga). It is possible to obtain the optimum energy band gap by adding S or Ga solute at a certain ratio in favour of Se and In respectively. It is also necessary to control the ratio of Ga and S additions and to retain a certain portion of In and Se to provide better properties of thin films.
참고문헌 (2)
- A, "Sol.En.and Sol", 41-42, pp.231~246 (1996)
- Mitchell, "IEEE Trans. on Electron Devices" (1990)
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