산화막 식각 기구를 위한 QMF Ion Beam 장치의 제작
QMF Ion Beam System Development for Oxide Etching Mechanism Study
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Abstract
A new ion beam extraction system is designed using a simple ion mass filter and a micro mass balance and a QMS based detecting system. A quadrupole Mass Filter is used for selective ion beam formation from inductively coupled high density plasma sources with appropriate electrostatic lens and final analyzing QMS. Also a quartz crystal microbalance is set between a QMF and a QMS to measure the etching and polymerization rate of the mass selected ion beam. An inductively coupled plasma was used as a ion/radical source which had an electron temperature of 4-8 eV and electron density of 41011 #/cm3. A computer interfaced system through 12bit AD-DA board can control the pass ion mass of the qmf by setting RF/DC voltage ratio applied to the quadrupoles so that time modulation of pass ion's mass is possible. So the direct measurements of ion - surface chemistry can be possible in a resolution of 1/sec based on the qcm's sensitivity. A full set of driving software and hardware setting is successfully carried out to get fundamental plasma information of the ICP source and analysed Ar+ beam was detected at the 2nd QMS.
참고문헌 (1)
- H. Y. Chang, "97 Plasma Forum Program by Korean Vacuum Society" (1997), Jeju National University
