Sol-gel법에 의한 박막태양전지용 CuInS2 박막의 증착과 특성
Characteristics and Deposition of CuInS2 film for thin solar cells via sol-gel method
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박막 태양전지의 저가·고효율화를 실현하기 위해 넓은 면적의 기판 위에 코팅이 가능하며 진공의 유지가 필요없기 때문에 장치가 간단하고 고순도의 균질한 박막을 얻을 수 있고 박막의 조성을 쉽게 조절할 수 있는 Sol-Gel법을 이용하였다. Se보다 저가이며 독성이 없고 풍부한 원료인 S로 치환하여 사용하며 Cu/In비 값을 조절하고 tetragonal chalcopyrite 구조를 갖는 CuInS2의열처리 온도에 따른 박막의 구조적, 광학적 특성에 미치는 변수들의 영향을 알아보았다. XRD pattern 을 관찰한 결과 Cu/In비가 1.0일 때 2θ = 27.9o에서 주피크가 가장 강하게 나타났으며 (112) 방향의 배향성을 가진chalcopyrite상임을 확인 할 수 있었다. 열처리 온도가 증가할수록 (112) 면의 강도가 커지며 500oC에서 열처리를 한 CuInS2박막은 tetragonal 구조의 화학량론적 CuInS2 특징을 나타내고 본 실험의 샘플의 격자상수를 측정한 값이 a = 5.5032, c =11.1064 Å이며 JCPDS(Joint Committee on Powder Diffraction Standards)에 보고된 데이터 a = 5.523, c = 11.14 Å과 거의 일치하였다. 광학적 특성을 알아보기 위해 측정한 광투과율은 가시광선 영역(380~770 nm)에서 전체적으로 30 % 이하로 나타났다.
Abstract
CuInS2 thin films were prepared using a sol-gel spin-coating method. That makes large scale substrate coating,simple equipment, easy composition control available. The structural and optical properties of CuInS2 thin films that include less toxic materials (S) instead of Se, tetragonal chalcopyrite structure. Copper acetate monohydrate (Cu(CH3COO)2 · H2O)and indium acetate (In(CH3COO)3) were dissolved into 2-propanol and 1-propanol, respectively. The two solutions were mixed into a starting solution. The solution was dropped onto glass substrate, rotated at 3000 rpm, and dried at 300oC for Cu-In as-grown films. The as-grown films were sulfurized inside a graphite container box and chalcopyrite phase of CuInS2was observed. To determine the optical properties measured optical transmittance of visible light region (380~770 nm) were less than 30 % in the overall. The XRD pattern shows that main peak was observed at Cu/In ratio = 1.0 and its orientation was (112). As annealing temperature increases, the intensity of (112) plane increases. The unit cell constant are a = 5.5032and c = 11.1064 Å, and this was well matched with JCPDS card. The optical transmittance of visible region was below than 30 %.
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