펄스형 진공 아크법에 의한 ZnO 박막의 상온합성 및 이의 전기적 특성에 미치는 산소분압비의 영향
Room-Temperature Deposition of ZnO Thin Film by Pulsed Vacuum Arc and Effect of Oxygen Gas Ratio on Its Electrical Properties
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Abstract
Highly c-axis oriented Zinc oxide (ZnO) films were successfully deposited at room temperature by oxygen ion-assisted pulsed filtered vacuum arc. The effect of oxygen gas ratio (O2/O2+Ar) on the preferred orientation, surface morphology and resistivity of the ZnO films were investigated. Highly crystalline ZnO films with (002) orientation were obtained at over 13% of oxygen gas ratio. Increasing oxygen gas ratio up to 80% was found to improve crystallinity of the films. From hall measurements, it was found that the film has n-type characteristic and carrier concentration and its mobility were closely related with oxygen gas ratio. Minimal resistivity of 3.6´10-3 W · cm was obtained in the range of 20% to 40% of oxygen gas ratio.
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