다양한 레이저 조건에 따른 컷팅셀 제작 및 특성 분석
Fabrication and Chracteristics of Cutting Cell with Various Laser Conditions
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Laser cutting cell of solar cells can achieve high voltage and efficiency through more array than conventional 6 inch cell compared to same area. In this study, we fabricated c-Si cutting cell with various lasers and laser conditions such as power, speed, and number of times. In the case of picosecond laser, excellent surface characteristics were obtained due to small surface defects and low thermal damage at the output of 20W and the speed of 100 mm/s. However, it is not possible to fabricate a cutting cell having good characteristics due to nonuniform cutting inside the wafer when the processing for forming a cutting cell is not sufficiently performed. For nanosecond lasers, the best wafer characteristics were obtained for fabrication of excellent cutting cells at a frequency of 500 kHz and a laser speed of 100 mm/s. However, the nanosecond laser has not been processed sufficiently in the condition of a number of times. As a result, it was confirmed that the wafer thickness was cut by 63 μm of the cell thickness of 170 μm in the condition of five times of laser process. It was found that more than 30% of the wafer thickness had to be processed to fabricate the cutting cell. After cutting the 6-inch cell having the voltage of 0.65 V, we obtained the voltage of about 0.63 V.
Abstract
Laser cutting cell of solar cells can achieve high voltage and efficiency through more array than conventional 6 inch cell compared to same area. In this study, we fabricated c-Si cutting cell with various lasers and laser conditions such as power, speed, and number of times. In the case of picosecond laser, excellent surface characteristics were obtained due to small surface defects and low thermal damage at the output of 20W and the speed of 100 mm/s. However, it is not possible to fabricate a cutting cell having good characteristics due to nonuniform cutting inside the wafer when the processing for forming a cutting cell is not sufficiently performed. For nanosecond lasers, the best wafer characteristics were obtained for fabrication of excellent cutting cells at a frequency of 500 kHz and a laser speed of 100 mm/s. However, the nanosecond laser has not been processed sufficiently in the condition of a number of times. As a result, it was confirmed that the wafer thickness was cut by 63 μm of the cell thickness of 170 μm in the condition of five times of laser process. It was found that more than 30% of the wafer thickness had to be processed to fabricate the cutting cell. After cutting the 6-inch cell having the voltage of 0.65 V, we obtained the voltage of about 0.63 V.
참고문헌 (7)
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- Benson, K. M., "Experimental Investigation and Optimization of Laser Cutting Parameters for Solar Cells Based On Taguchi Method", IOSR Journal of Mechanical and Civil Engineering, 14(5), pp.41~51 (2017)
- Chen, Y., "Characterization of Heat Affected Zone Liquation Cracking in laser additive manufacturing of Inconel 718", Materials and Design, 90, pp.586~594 (2016)
- Finn, D. S., "Study of Die Break Strength and Heat-affected Zone for Laser Processing of thin Silicon Wafers", Journal of Laser Applications, 27(3), pp.032004-1~032004-8 (2015)
- Pan, X. N., "Laser-Assisted Waterjet Micro-Grooving of Silicon Wafers for Minimizing Heat Affected Zone", Materials Science Forum, 861, pp.133~138 (2016)