Spectroscopic diagnostics and silicon cluster formation in silane plasmas
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초록
We investigated the correlation of the slope of the Si* intensity versus the SiH* intensity with the Si cluster volume frac-tion. The light emitted from the plasma was analyzed using optical emission spectroscopy. The deposition rates with cluster and those of without clusters were measured using quartz crystal microbalances installed in the plasma reactor. The silicon cluster vol-ume fraction was derived by comparing the resulting deposition rates with cluster and without clusters. The results showed that the slope of the Si* intensity versus SiH* intensity varied depending on the reaction conditions and was roughly correlated with the sili-con cluster volume fraction. Therefore, this simple spectroscopic comparison could be used as an indicator of cluster incorporation into thin films.
Abstract
We investigated the correlation of the slope of the Si* intensity versus the SiH* intensity with the Si cluster volume frac-tion. The light emitted from the plasma was analyzed using optical emission spectroscopy. The deposition rates with cluster and those of without clusters were measured using quartz crystal microbalances installed in the plasma reactor. The silicon cluster vol-ume fraction was derived by comparing the resulting deposition rates with cluster and without clusters. The results showed that the slope of the Si* intensity versus SiH* intensity varied depending on the reaction conditions and was roughly correlated with the sili-con cluster volume fraction. Therefore, this simple spectroscopic comparison could be used as an indicator of cluster incorporation into thin films.
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