Substrate Temperature Dependence of Microcrystalline Silicon Thin Films by Combinatorial CVD Deposition
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A high-pressure depletion method using plasma chemical vapor deposition (CVD) is often used to deposit hydrogenated microcrystalline silicon (μc-Si:H) films of a low defect density at a high deposition rate. To understand proper deposition conditions of μc-Si:H films for a high-pressure depletion method, Si films were deposited in a combinatorial way using a multi-hollow discharge plasma CVD method. In this paper the substrate temperature dependence of μc-Si:H film properties are demonstrated. The higher substrate temperature brings about the higher deposition rate, and the process window of device quality μc-Si:H films becomes wider until 200oC. This is attributed to competitive reactions between Si etching by H atoms and Si deposition.
Abstract
A high-pressure depletion method using plasma chemical vapor deposition (CVD) is often used to deposit hydrogenated microcrystalline silicon (μc-Si:H) films of a low defect density at a high deposition rate. To understand proper deposition conditions of μc-Si:H films for a high-pressure depletion method, Si films were deposited in a combinatorial way using a multi-hollow discharge plasma CVD method. In this paper the substrate temperature dependence of μc-Si:H film properties are demonstrated. The higher substrate temperature brings about the higher deposition rate, and the process window of device quality μc-Si:H films becomes wider until 200oC. This is attributed to competitive reactions between Si etching by H atoms and Si deposition.
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