CMOS 65nm Active 2-port Inductor using tunable feedback resistance
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In this paper, a novel CMOS high Q-factor active 2-port inductor with feedback resistor has been proposed, mathematically analyzed and fabricated. The proposed circuit topology can improve its equivalent inductance range and Q-factor. The proposed active 2-port inductor was implemented by 65 nm Samsung RF CMOS technology, which demonstrates a maximum quality-factor of 600 with 3 nH inductance. The fabricated circuit occupies 200 um x 300 um chip size and has high Q-factor and inductance over wide operating frequency range as compared to the conventional active 2-port inductor circuits. In addition, the inductance variation is very small in wide operating frequency range.
Abstract
In this paper, a novel CMOS high Q-factor active 2-port inductor with feedback resistor has been proposed, mathematically analyzed and fabricated. The proposed circuit topology can improve its equivalent inductance range and Q-factor. The proposed active 2-port inductor was implemented by 65 nm Samsung RF CMOS technology, which demonstrates a maximum quality-factor of 600 with 3 nH inductance. The fabricated circuit occupies 200 um x 300 um chip size and has high Q-factor and inductance over wide operating frequency range as compared to the conventional active 2-port inductor circuits. In addition, the inductance variation is very small in wide operating frequency range.