CMOS 2-port Active Inductor using LC Resonance Circuit
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초록
This paper presents a novel 2-port high-Q active inductor using LC parallel resonator. The proposed 2-port high-Q active inductor consists of the feedback parallel resonance circuits that comprise of low-Q spiral inductor and capacitor. The novelty of the proposed structure can improve its Q-factor decreased by the parasitic capacitance and extend high-Q operating frequency range. For experimental validation, the 2-port active inductor was fabricated with 65 nm Samsung CMOS technology. The fabricated circuit shows inductance of above 2nH and Q-factor higher than 35 for frequency range of 3 ~ 10 GHz.
Abstract
This paper presents a novel 2-port high-Q active inductor using LC parallel resonator. The proposed 2-port high-Q active inductor consists of the feedback parallel resonance circuits that comprise of low-Q spiral inductor and capacitor. The novelty of the proposed structure can improve its Q-factor decreased by the parasitic capacitance and extend high-Q operating frequency range. For experimental validation, the 2-port active inductor was fabricated with 65 nm Samsung CMOS technology. The fabricated circuit shows inductance of above 2nH and Q-factor higher than 35 for frequency range of 3 ~ 10 GHz.
참고문헌 (14)
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