A low noise Hall Effect Sensor Readout Circuit
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In this paper, the structure, operation principles, and characteristics of the hall sensor using semiconductors are discussed through the hall sensor design. The CMOS hall sensor is composed of a CMOS hall plate and Readout Integrated Circuit (ROIC) which processes the signal of the hall plate. For this sensor, a detailed ROIC design is required due to the small output signal of the hall plate. The ROIC consists of the part related to current spinning with chopping and Instrumentation Amplifier (IA). In this circuit, the offset and 1/f noise of the magnetic signal are separated by the current spinning frequency of 100 kHz and the noise of amplifier is removed by chopping. The IA has high input impedance, low offset and large Common Mode Rejection Ratio (CMRR). Also, the de-chopping is placed inside the IA which can be designed with op amp that has low slew rate and narrow bandwidth. The designed ROIC has the difference 43dB gain between noise gain and signal gain. The signal gain is 64dB. The proposed hall sensor operates as a switch at 0~20mT magnetic field in 10 kHz with 1mA bias current. It has been integrated in a standard 0.18um CMOS technology.
Abstract
In this paper, the structure, operation principles, and characteristics of the hall sensor using semiconductors are discussed through the hall sensor design. The CMOS hall sensor is composed of a CMOS hall plate and Readout Integrated Circuit (ROIC) which processes the signal of the hall plate. For this sensor, a detailed ROIC design is required due to the small output signal of the hall plate. The ROIC consists of the part related to current spinning with chopping and Instrumentation Amplifier (IA). In this circuit, the offset and 1/f noise of the magnetic signal are separated by the current spinning frequency of 100 kHz and the noise of amplifier is removed by chopping. The IA has high input impedance, low offset and large Common Mode Rejection Ratio (CMRR). Also, the de-chopping is placed inside the IA which can be designed with op amp that has low slew rate and narrow bandwidth. The designed ROIC has the difference 43dB gain between noise gain and signal gain. The signal gain is 64dB. The proposed hall sensor operates as a switch at 0~20mT magnetic field in 10 kHz with 1mA bias current. It has been integrated in a standard 0.18um CMOS technology.
참고문헌 (10)
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