2 차원 Si 종형 Hall 소자의 자기감도 개선
Magnetic Sensitivity Improvement of 2-Dimensional Silicon Vertical Hall Device
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초록
The 2-dimensional silicon vertical Hall devices, which are sensitive to X,Y components of the magnetic field parallel to the surface of the chip, are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-SiO2 interface and n-epi layer to improve the sensitivity and influence of interface effect. Experimental samples are a sensor type K with and type J without p+ isolation dam adjacent to the center current electrode. The results for both type show a more high sensitivity than the former`s 2-dimensional vertical Hall devices and a good linearity. The measured non-linearity is about 0.8%. The sensitivity of type J and type K are about 66 V/AT and 200 V/AT, respectively. This sensor’ behavior can be explained by the similar J-FET model.
Abstract
The 2-dimensional silicon vertical Hall devices, which are sensitive to X,Y components of the magnetic field parallel to the surface of the chip, are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-SiO2 interface and n-epi layer to improve the sensitivity and influence of interface effect. Experimental samples are a sensor type K with and type J without p+ isolation dam adjacent to the center current electrode. The results for both type show a more high sensitivity than the former`s 2-dimensional vertical Hall devices and a good linearity. The measured non-linearity is about 0.8%. The sensitivity of type J and type K are about 66 V/AT and 200 V/AT, respectively. This sensor’ behavior can be explained by the similar J-FET model.
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