본문 바로가기
KERD
논문KCI 등재

A Photodiode Sensor Readout Circuit Utilizing a Differential Current Mirror for Dark Current Cancellation

0

조회

0

다운로드

0

인용

0

참고문헌

키워드

초록

This paper proposes a differential current mirror circuit with built-in dark current cancellation for photodiode applications. The photodiode sensor, modeled with a diode and a parasitic capacitor, generates a current signal that is directed through two current mirrors. The signals from each current mirror are then differentially outputted. Thanks to the proposed differential current mirrors, the only high frequency signal current can be transferred to output port effectively. The proposed sensor interface ICs were implemented using the PDK of the DB Hitek process and achieved a dark current cancellation ratio of 40 dB at a reconfigurable frequency.

Abstract

This paper proposes a differential current mirror circuit with built-in dark current cancellation for photodiode applications. The photodiode sensor, modeled with a diode and a parasitic capacitor, generates a current signal that is directed through two current mirrors. The signals from each current mirror are then differentially outputted. Thanks to the proposed differential current mirrors, the only high frequency signal current can be transferred to output port effectively. The proposed sensor interface ICs were implemented using the PDK of the DB Hitek process and achieved a dark current cancellation ratio of 40 dB at a reconfigurable frequency.

참고문헌 (7)

  1. X. Sun, "HgCdTe avalanche photodiode array detectors with single photon sensitivity and integrated detector cooler assemblies for space LiDAR applications", Opt. Eng, 58(6), pp.1~ (2019)
  2. L. W. Lim, "Improved planar InAs avalanche photodiodes with reduced dark current and increased responsivity", J. Lightw. Technol, 37(10), pp.2375~2379 (2019)
  3. S. Dey, "A CMOS front-end interface ASIC for SiPM-based positron emission tomography imaging systems", Proc. IEEE Biomed. Circuits Syst. Conf. (BioCAS), pp.1~4 (2017)
  4. A. M. Brunetti, "Pixel design driven performance improvement in 4T CMOS image sensors : Dark current reduction and full-well enhancement", IEEE Trans. Electron Devices, 67(1), pp.409~412 (2020)
  5. R. Y. Chen, "CMOS transimpedance amplifier for visible light communications", IEEE Trans. Very Large Scale Integr. (VLSI)Syst, 23(11), pp.2738~2742 (2015)
  6. C. -M. Tsai, "A 40 mW 3 Gb", s self-compensated differential transimpedance amplifier with enlarged input capacitance tolerance in 0. 18μm CMOS technology, 2009, pp.44(10), 2671~2677
  7. M. G. Ahmed, "34-GBd linear transimpedance amplifier for 200-Gb", s DP-16-QAM optical coherent receivers, 2019, pp.54(3), 834~844

관련 논문AI추천

이 간행물의 다른 논문 (7건)