H-Band 4-Array Frequency-Locked Oscillator ICs Packaged in an Oversized Waveguide Channel
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This paper presents the design and analysis of a 4-array oscillator module based on InP 250 nm HBT technology, with a focus on spatial power combining. Four identical oscillator ICs were integrated into a 1720 μm extended waveguide, and individual biasing was applied to achieve frequency locking at 262.7 GHz. While locking was successful, power combining through the binary channel could not be achieved due to phase mismatches between oscillator elements. Radiation pattern measurements confirmed out-of-phase locking, and the Total Radiated Power (TRP) reached 6.1 dBm, representing a 6.1 dB increase over a single module. These results highlight both the potential and the challenges of spatial power combining for high-frequency oscillator arrays.
Abstract
This paper presents the design and analysis of a 4-array oscillator module based on InP 250 nm HBT technology, with a focus on spatial power combining. Four identical oscillator ICs were integrated into a 1720 μm extended waveguide, and individual biasing was applied to achieve frequency locking at 262.7 GHz. While locking was successful, power combining through the binary channel could not be achieved due to phase mismatches between oscillator elements. Radiation pattern measurements confirmed out-of-phase locking, and the Total Radiated Power (TRP) reached 6.1 dBm, representing a 6.1 dB increase over a single module. These results highlight both the potential and the challenges of spatial power combining for high-frequency oscillator arrays.