A Novel Structure for the Improved Switching Time of 50V Class Vertical Power MOSFET
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In this paper, a novel trench power MOSFET using a Separate-W-gated technique MOSFET (SWFET) is proposed. Because the SWFET has a very low QGD compared to other forms of technology, it can be applied to high-speed power systems. The results found that the SWFET-applied QGD was decreased by 40% when compared to simply using the more conventional trench gate MOSFET. CISS (input capacitance : CGS+CGD), COSS (output capacitance : CGD+CDS) and CRSS (reverse recovery capacitance : CGD) were improved by 24%, 40%, and 50%, respectively. The switching characteristics of the inverter circuit shows a 24.9% enhancement of reverse recovery time, and the power efficiency of the DC-DC buck converter increased by 14.2%. In addition, the proposed SWFET does not require additional process steps and There was no degradation in the electrical performance of the current-voltage and on-resistance.
Abstract
In this paper, a novel trench power MOSFET using a Separate-W-gated technique MOSFET (SWFET) is proposed. Because the SWFET has a very low QGD compared to other forms of technology, it can be applied to high-speed power systems. The results found that the SWFET-applied QGD was decreased by 40% when compared to simply using the more conventional trench gate MOSFET. CISS (input capacitance : CGS+CGD), COSS (output capacitance : CGD+CDS) and CRSS (reverse recovery capacitance : CGD) were improved by 24%, 40%, and 50%, respectively. The switching characteristics of the inverter circuit shows a 24.9% enhancement of reverse recovery time, and the power efficiency of the DC-DC buck converter increased by 14.2%. In addition, the proposed SWFET does not require additional process steps and There was no degradation in the electrical performance of the current-voltage and on-resistance.
참고문헌 (21)
- B. J. Baliga, "An overview of smart power technology", IEEE Trans. Electron Devices, 38(7), pp.1568~1575 (1991)
- A. Gagliardi, "Planning Of Power Systems and Green Power Market", Power Tech Conference Proceedings, IEEE Bologna, 1 (2003)
- L. Lorenz, "Power Semiconductor‐Driving Technology for High Power Green Electronic Systems", VLSI Design, Automation, Test (VLSI-DAT), 2012 International Symposium, pp.1~2 (2012)
- R. P. Zingg, "On the specific on-resistance of high-voltage and power devices", IEEE Trans. Electron Devices, 51(3), pp.492~499 (2004)
- R. J. E. Hueting, "Switching performance of low-voltage n-channel trench MOSFETs", Proc. ISPSD, pp.177~180 (2002)
- R. J. E. Hueting, "Gate-drain charge analysis for switching in power trench MOSFETs", IEEE Trans. Electron Devices, 51(8), pp.1323~1330 (2004)
- M. Darwish, "W-gated trench power MOSFET(WFET)", Proc. Inst. Elect. Eng. —Circuits Devices Syst, 151(3), pp.238~242 (2004)
- M. Darwish, "A new power W-gated trench MOSFET(WMOSFET)with high switching performance", Proc. ISPSD, pp.24~27 (2003)
- "Atlas User’s Manual: Device Simulation Software" (2008), Silvaco Int.
- H. -R. Chang, "Trench gate structure with thick bottom oxide", U.S. Patent 4 992 390, ~ (1991)
- Q. Jiang, "A High-Speed Deep-Trench MOSFET With a Self-Biased Split Gate", IEEE Trans. Electron Devices, 57(8), pp.1972~1977 (2010)
- 조두형, "Gate 전하를 감소시키기 위해 Separate Gate Technique을 이용한 Trench Power MOSFET", 전기전자학회논문지, 16(4), pp.283~289 (2012), 한국전기전자학회
- K. S. Nam, "A novel simplified process for fabricating a very high density P-channel trench gate power MOSFET", IEEE Electron Device Lett, 21(7), pp.365~367 (2000)
- M. H. Juang, "Fabrication of trench-gate power MOSFETs by using a dual doped body region", Solid State Electron, 48(7), pp.1079~1085 (2004)
- B. J. Baliga, "Modern Power Devices" (1992), Wiley
- B. J. Baliga, "Fundamentals of Power Semiconductor Devices" (2008), Springer
- C. K. Ong, "A mathematical model for power MOSFET capacitances", Power Electronics Specialists Conference, 1991. PESC '91 Record, 22nd Annual IEEE, pp.423~429 (1991)
- Y. Xiong, "New Physical insight on power MOSFET switching losses", Power Electronics, IEEE Transactions on, 24(2), pp.525~531 (2009)
- C. Cavallaro, "Analysis modeling and simulation of low-voltage MOSFETs in synchronous-rectifier buck-converter applications", Industrial Electronics Society, 2003. IECON '03. The 29th Annual Conference of the IEEE, 2, pp.1697~1702 (2003)
- Schmidt, "DCDC Converter for Hybrid Vehicle Applications", Integrated Power Systems (CIPS), 2008 5th International Conference (2008)
- P. Ralston, "Design and Verification of a High Voltage, Capacitance Voltage Measurement System for Power MOSFETs", master, pp.2008