새로운 구조의 pMOS 삽입형 TIGBT의 전기적 특성 분석
Analysis of the electrical characteristics of the novel TIGBT with additional pMOS
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초록
In this paper, we proposed the novel TIGBT with an additional p-type MOS structure to achieve the improved trade-off between turn-off and on-state voltage drop(Vce(sat)). These low on-resistance and the fast switching characteristics of the proposed TIGBT are caused by an enhanced electron current injection efficiency which is caused by additional p-type MOS structure. In the simulation result, the proposed TIGBT has the lower on state voltage of 1.67V and the shorter turn-off time of 3.1us than those of the conventional TIGBT(2.25V, 3.4us).
Abstract
In this paper, we proposed the novel TIGBT with an additional p-type MOS structure to achieve the improved trade-off between turn-off and on-state voltage drop(Vce(sat)). These low on-resistance and the fast switching characteristics of the proposed TIGBT are caused by an enhanced electron current injection efficiency which is caused by additional p-type MOS structure. In the simulation result, the proposed TIGBT has the lower on state voltage of 1.67V and the shorter turn-off time of 3.1us than those of the conventional TIGBT(2.25V, 3.4us).
참고문헌 (16)
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