A Wideband Inductorless LNA for Inter-band and Intra-band Carrier Aggregation in LTE-Advanced and 5G
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This paper presents a wideband low noise amplifier (LNA) that is suitable for LTE-Advanced and 5Gcommunication standards employing carrier aggregation (CA). The proposed LNA encompasses a common inputstage and a dual output second stage with a buffer at each distinct output. This architecture is targeted to operatein both intra-band (contiguous and non-contiguous) and inter-band CA. In the proposed design, the input andsecond stages employ a gm enhancement with resistive feedback technique to achieve self-biasing, enhanced gain,wide bandwidth as well as reduced noise figure of the proposed LNA. An up/down power controller controls thesingle input single out (SISO) and single input multiple outputs (SIMO) modes of operation for inter-band andintra-band operations. The proposed LNA is designed with a 45nm CMOS technology. For SISO mode of operation,the LNA operates from 0.52GHz to 4.29GHz with a maximum power gain of 17.77dB, 2.88dB minimum noise figureand input (output) matching performance better than -10dB. For SIMO mode of operation, the proposed LNAoperates from 0.52GHz to 4.44GHz with a maximum voltage gain of 18.30dB, a minimum noise figure of 2.82dBwith equally good matching performance. An IIP3 value of -6.7dBm is achieved in both SISO and SIMO operations. with a maximum current of 42mA consumed (LNA+buffer in SIMO operation) from a 1.2V supply.
Abstract
This paper presents a wideband low noise amplifier (LNA) that is suitable for LTE-Advanced and 5Gcommunication standards employing carrier aggregation (CA). The proposed LNA encompasses a common inputstage and a dual output second stage with a buffer at each distinct output. This architecture is targeted to operatein both intra-band (contiguous and non-contiguous) and inter-band CA. In the proposed design, the input andsecond stages employ a gm enhancement with resistive feedback technique to achieve self-biasing, enhanced gain,wide bandwidth as well as reduced noise figure of the proposed LNA. An up/down power controller controls thesingle input single out (SISO) and single input multiple outputs (SIMO) modes of operation for inter-band andintra-band operations. The proposed LNA is designed with a 45nm CMOS technology. For SISO mode of operation,the LNA operates from 0.52GHz to 4.29GHz with a maximum power gain of 17.77dB, 2.88dB minimum noise figureand input (output) matching performance better than -10dB. For SIMO mode of operation, the proposed LNAoperates from 0.52GHz to 4.44GHz with a maximum voltage gain of 18.30dB, a minimum noise figure of 2.82dBwith equally good matching performance. An IIP3 value of -6.7dBm is achieved in both SISO and SIMO operations. with a maximum current of 42mA consumed (LNA+buffer in SIMO operation) from a 1.2V supply.
참고문헌 (11)
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