A CMOS LNA based on Inverter Structure for Wideband Applications
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In recent years, the potential technology for short distance and high-data wireless communication systems has been grown. Ultra-wideband (UWB) technology has emerged as a considerable interest and new technology. According to a proposed standard, the UWB system is assigned to operate over 3.1 - 5 GHz or 3.1 - 10.6 GHz. Most of the proposed applications allow transmission of signals between 3.1 and 10.6 GHz. In this paper, a wideband CMOS Low Noise Amplifier (LNA) is proposed with a inverter structure using inductor peaking technique and broadband matching techniques, which meets stringent requirements of UWB system in the proposed specifications. The proposed LNA has the inverter structure and cascode structure with shunt feedback. Measurement results show the maximum power gain (S21) of 17.4 dB with the 3-dB band and input/output reflection coefficient (S11, S22) of less than –9.7 dB from 3.1 to 9.6 GHz. In addition, the fabricated LNA achieves the minimum noise figure (NF) of 3.5 dB from the operating frequency, which value is much lower than previously reported state-of-the-art wideband amplifiers. The input-referred IIP3 and the input-referred P1dB of the proposed LNA are achieved as 0 dBm and –10 dBm, respectively, while consuming 27 mW in 0.18- RF CMOS process.
Abstract
In recent years, the potential technology for short distance and high-data wireless communication systems has been grown. Ultra-wideband (UWB) technology has emerged as a considerable interest and new technology. According to a proposed standard, the UWB system is assigned to operate over 3.1 - 5 GHz or 3.1 - 10.6 GHz. Most of the proposed applications allow transmission of signals between 3.1 and 10.6 GHz. In this paper, a wideband CMOS Low Noise Amplifier (LNA) is proposed with a inverter structure using inductor peaking technique and broadband matching techniques, which meets stringent requirements of UWB system in the proposed specifications. The proposed LNA has the inverter structure and cascode structure with shunt feedback. Measurement results show the maximum power gain (S21) of 17.4 dB with the 3-dB band and input/output reflection coefficient (S11, S22) of less than –9.7 dB from 3.1 to 9.6 GHz. In addition, the fabricated LNA achieves the minimum noise figure (NF) of 3.5 dB from the operating frequency, which value is much lower than previously reported state-of-the-art wideband amplifiers. The input-referred IIP3 and the input-referred P1dB of the proposed LNA are achieved as 0 dBm and –10 dBm, respectively, while consuming 27 mW in 0.18- RF CMOS process.
참고문헌 (18)
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