PECVD SiON 절연막을 이용한 4H-SiC MOS 소자 특성 연구
Study on Characteristics of 4H-SiC MOS Device with PECVD SiON Insulator
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초록
본 논문에서는 플라즈마 화학기상증착 (plasma enhanced chemical vapor deposition, PECVD) 방식을 이용한 산질화규소 (Silicon oxynitride, SiON) 절연체를 이용하여 4H-SiC metal-oxide-semiconductor (MOS) 소자를 제작하고 특성 분석을 수행하였다. 제작된 소자는 금속 증착 후 열처리 과정 (post metallization annealing, PMA)을 통하여 트랩 밀도가 크게 감소하는 것을 확인하였으며, 특히 500°C의 forming gas 분위기에서 열처리 된 소자의 경우 매우 뛰어난 MOS 특성을 나타내었다. 본 연구를 통하여 4H-SiC MOS 구조를 위한 대체 게이트 절연체로써 PECVD SiON의 활용 가능성을 확인 할 수 있었다
Abstract
In this work, we have investigated the characteristics of 4H-SiC metal-oxide-semiconductor (MOS) devices with silicon oxynitride (SiON) insulator using plasma enhanced chemical vapor deposition (PECVD). After post metallization annealing, the trap densities of the fabricated devices decreased significantly. In particular, the device annealed at 500°C in forming gas ambient exhibited excellent MOS characteristics along with negligible hysteresis, which proved the potential of PECVD SiON as an alternative gate insulator for use in 4H-SiC MOS device.
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