플로팅 금속 가드링 구조를 이용한 Ga2O3 쇼트키 장벽다이오드의 항복 특성 개선 연구
Improved breakdown characteristics of Ga2O3 Schottky barrier diode using floating metal guard ring structure
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본 연구에서는 TCAD 시뮬레이션을 사용하여 산화갈륨 (Ga2O3) 기반 수직형 쇼트키 장벽 다이오드 고전압 스위칭 소자의항복전압 특성을 개선하기 위한 가드링 구조를 이온 주입이 필요 없는 간단한 플로팅 금속 구조를 활용하여 제안하였다. 가드링 구조를 도입하여 양극 모서리에 집중되던 전계를 감소시켜 항복전압 성능 개선을 확인하였으며, 이때 금속 가드링의 폭과 간격 및 개수에 따른 항복전압 특성 분석을 전류-전압 특성과 내부 전계 및 포텐셜 분포를 함께 분석하여 최적화를 수행하였다. N형 전자 전송층의 도핑농도가 5 × 1016cm-3이고 두께가 5 μm인 구조에 대하여 1.5 μm 폭의 금속 가드링을 0.2 μm로 5개 배치하였을 경우 항복전압 2000 V를 얻었으며 이는 가드링 없는 구조에서 얻은 940 V 대비 두 배 이상 향상된 결과이며 온저항 특성의 저하는 없는 것으로 확인되었다. 본 연구에서 활용한 플로팅 금속 가드링 구조는 추가적인 공정단계 없이 소자의 특성을 향상시킬 수 있는 매우 활용도가 높은 기술로 기대된다.
Abstract
In this study, we have proposed a floating metal guard ring structure based on TCAD simulation in order to enhancethe breakdown voltage characteristics of gallium oxide (Ga2O3) vertical high voltage switching Schottky barrier diode. Unlike conventional guard ring structures, the floating metal guard rings do not require an ion implantation process. Thelocally enhanced high electric field at the anode corner was successfully suppressed by the metal guard rings, resultingin breakdown voltage enhancement. The number of guard rings and their width and spacing were varied for structuraloptimization during which the current-voltage characteristics and internal electric field and potential distributions werecarefully investigated. For an n-type drift layer with a doping concentration of 5 × 1016cm-3 and a thickness of 5 μm, theoptimum guard ring structure had 5 guard rings with an individual ring width of 1.5 μm and a spacing of 0.2 μmbetween rings. The breakdown voltage was increased from 940 V to 2000 V without degradation of on-resistance byemploying the optimum guard ring structure. The proposed floating metal guard ring structure can improve the deviceperformance without requiring an additional fabrication step.
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