상시불통형 p-GaN/AlGaN/GaN 이종접합트랜지스터의 게이트막 농도 계조화 효과
Gate Field Alleviation by graded gate-doping in Normally-off p-GaN/AlGaN/GaN Hetrojunction FETs
1
조회
0
다운로드
0
인용
0
참고문헌
키워드
초록
본 연구에서는 상시불통형 p-GaN 전력반도체소자의 신뢰성 향상을 위해 p-GaN 게이트막 내부의 전계를 완화하고자p-GaN 게이트 도핑농도의 계조화를 제안한다. TCAD 시뮬레이션으로 균일한 도핑농도를 갖는 소자와 문턱전압과 출력 전류 특성이 동일하도록 p형 농도를 계조화하고 최적화하였다. p-GaN 게이트층에서의 전계 감소로 소자의 게이트 신뢰성이개선될 수 있을 것으로 판단된다.
Abstract
In this work, we proposed a graded gate-doping structure to alleviate an electric field in p-GaN gate layer in order toimprove the reliability of normally-off GaN power devices. In a TCAD simulation by Silvaco Atlas, a distribution of thegraded p-type doping concentration was optimized to have a threshold voltage and an output current characteristics assame as the reference device with a uniform p-type gate doping. The reduction of an maximum electric field in p-GaNgate layer was observed and it suggests that the gate reliability of p-GaN gate HFETs can be improved.
참고문헌 (10)
- S. Liu, "Performance Enhancment of Normally-Off Al2O3", AlN, Proc. of the 26th Int. Symp. Power semiconductor Devices & IC’s (ISPSD), pp.2014[DOI]
- K. J. Chen, "Physics of fluorine plasma ion implantation for GaN normally-off HEMT technology", Tech. Dig. Int. Electron Devices Meet, 1, pp.465~468 (2011)
- Y. Uemeto, "Gate injection transistor (GIT) -A normally-off AlGaN", GaN power transistor using conductivity modulation, 2007, pp.54(12), 3393~3399
- O. Hilt, "Normally-off AlGaN", GaN HFET with p-type GaN Gate and AlGaN Buffer, 2010, 347~350
- I. Hwang, "p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current", IEEE Electron Device Lett, 34(2), pp.202~204 (2013)[DOI]
- T. -L. Wu, "Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN", GaN High-Electron Mobility Transistors, 2015, pp.36(10), 1001~1003
- M. Meneghini, "Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate", Energies, 10(2), pp.153~ (2017)[DOI]
- A. Stockman, "On the Origin of the Leakage Current in p-Gate AlGaN", GaN HEMTs, 2018, 4B.5-1~4B.5-4
- A. Stockman, "Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN", GaN High-ElectronMobility Transistors, 2018, pp.65(12), 5365~5372
- L. Efthymiou, "On the physical operation and optimization of the p-GaN gate in normallyoff GaN HEMT devices", Appl. Phys. Lett, 110(12), pp.123502-1~123502-5 (2017)[DOI]