저온에서 AlGaN/GaN HEMT의 전기적 특성 변화
Electrical Characteristics of AlGaN/GaN HEMT at Low Temperature
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초록
AlGaN/GaN HEMT를 제작하여 상온에서 –178 oC의 저온에 이르기까지 트랜지스터의 전기적인 특성 변화를 연구하였다. 상온에서 264 mA/mm를 나타내던 게이트 길이 2 μm인 HEMT의 드레인 전류는 온도의 감소에 따라 변화하여 –108 oC의 온도에서 388 mA/mm로 47%의 증가를 나타냈으며 최대 트랜스컨덕턴스는 121 mS/mm로부터 183 mS/mm로 증가하였다. 또한 –178 oC의 온도에 이르기까지 –0.39 V의 문턱전압 변화를 보였다. 이러한 변화는 주로 상온에서부터 –108 oC의 온도에서 나타나고 있으며 온도감소에 따른 720 Ω/sq. 로부터 300 Ω/sq.로 감소하는 면저항의 변화와 함께하고 있다.
Abstract
Low temperature variation of electrical characteristics for AlGaN/GaN/HEMT was studied. To investigate the effect of temperatures, transistor was cool down to –178 oC and electrical characteristics were measured. The drain current density of an AlGaN/GaN HEMT with a gate length of 2 μm was increased from 264 mA/mm to 388 mA/mm and the maximum transconductance was increased from 105 mS/mm to 134 mS/mm by decreasing the temperature to –108 oC. Also, the threshold voltage was shifted –0.39 V with the temperature. The reason for the variations was seemed to the reduced channel resistance corresponding to the temperature. However, most of the variation of the electrical characteristics takes places above –108 oC.
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