N-이온주입이 4H-SiC SBDs의 깊은 준위 결함 및 소수캐리어 수명에 미치는 영향
The Impact of N-Ion Implantation on Deep-Level Defects and Carrier Lifetime in 4H-SiC SBDs
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초록
본 연구에서는 4H-SiC Epi Surface에 Nitrogen implantation 공정이 깊은준위결함과 lifetime에 미치는 영향을 비교분석하였다. Deep Level Transient Spectroscopy (DLTS)와 Time Resolved Photoluminescence (TR-PL)을 사용하여 깊은준위결함과carrier lifetime을 측정하였다. As-grown SBD에서는 0.16 eV, 0.67 eV, 1.54 eV 에너지 준위와 implantation SBD의 경우0.15 eV 준위에서의 결함을 측정되었으며, 이는 nitrogen implantation으로 불순물이 titanium 및 carbon vacancy를 대체됨으로 lifetime killer로 알려진 Z1/2, EH6/7 준위 결함은 감소하였다.
Abstract
In this study, the impact of Nitrogen implantation process on deep-level defects and lifetime in 4H-SiC Epi surfaceswas comparatively analyzed. Deep Level Transient Spectroscopy (DLTS) and Time Resolved Photoluminescence (TR-PL)were employed to measure deep-level defects and carrier lifetime. As-grown Schottky Barrier Diodes (SBDs)exhibited energy levels at 0.16 eV, 0.67 eV, and 1.54 eV, while for implantation SBD, defects at 0.15 eV wereobserved. This indicates a reduction in defects associated with energy levels Z1/2 and EH6/7, known as lifetimekillers, as impurities from nitrogen implantation replace titanium and carbon vacancies.
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