Thermal-annealing behavior of in-core neutron-irradiated epitaxial 4H SiC
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The effect of thermal annealing on defect recovery of in-core neutron-irradiated 4HeSiC was investigated. Au/SiC Schottky diodes were manufactured using a 4HeSiC epitaxial wafer that was neutronirradiated at the HANARO research reactor. The electrical characteristics of their epitaxial layers were analyzed under various conditions, including different neutron fluences (1.3 1017 and 2.7 1017 neutrons/cm2) and annealing times (up to 2 h at 1700 C). Capacityevoltage measurements showed high carrier compensation in the neutron-irradiated samples and a recovery tendency that increased with annealing time. The carrier density could be recovered up to 77% of the bare sample. Deep-level-transient spectroscopy revealed intrinsic defects of 4HeSiC with energy levels 0.47 and 0.68 eV below the conduction-band edge, which were significantly increased by in-core neutron irradiation. A previously unknown defect with a high electron-capture cross-section was discovered at 0.36 eV below the conduction-band edge. All defect concentrations decreased with 1700 C annealing; the decrease was faster when the defect level was shallow.
Abstract
The effect of thermal annealing on defect recovery of in-core neutron-irradiated 4HeSiC was investigated. Au/SiC Schottky diodes were manufactured using a 4HeSiC epitaxial wafer that was neutronirradiated at the HANARO research reactor. The electrical characteristics of their epitaxial layers were analyzed under various conditions, including different neutron fluences (1.3 1017 and 2.7 1017 neutrons/cm2) and annealing times (up to 2 h at 1700 C). Capacityevoltage measurements showed high carrier compensation in the neutron-irradiated samples and a recovery tendency that increased with annealing time. The carrier density could be recovered up to 77% of the bare sample. Deep-level-transient spectroscopy revealed intrinsic defects of 4HeSiC with energy levels 0.47 and 0.68 eV below the conduction-band edge, which were significantly increased by in-core neutron irradiation. A previously unknown defect with a high electron-capture cross-section was discovered at 0.36 eV below the conduction-band edge. All defect concentrations decreased with 1700 C annealing; the decrease was faster when the defect level was shallow.
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