후열처리 분위기에 따른 깊은 준위결함의 변화가 Ga2O3/SiC 이종접합 다이오드에 미치는 영향 분석
Effects of Deep Level Defect Variations on Ga2O3/SiC Heterojunction Diodes Due to Post-Annealing Atmosphere
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초록
본 연구에서는 다양한 가스 분위기에서 후열처리를 진행한 후 Ga2O3/SiC 이종접합 다이오드의 깊은 준위 결함 변화를 Deep Level Transient Spectroscopy(DLTS) 기법으로 분석하여 깊은 준위 결함의 변화가 Ga2O3/SiC 이종접합 소자의 전기적 특성에미치는 영향을 조사하였다. 또한, J-V 측정 및 Hall 측정을 통한 전기적 특성 분석을 실시하였고, N2 분위기에서 열처리된 소자에서3.06 × 10-2 A/cm2로 가장 높은 on-state current가 측정되었으며, carrier concentration은 3.8 × 1014 cm-3로 증가하는것이 관측되었다. 이는 후열처리 분위기에 따른 깊은 준위 결함의 변화가 전기적 특성에 영향을 미칠 수 있음을 시사한다.
Abstract
In this research, we explored the influence of post-annealing atmospheres on the electrical properties of Ga2O3/SiC heterojunction diodes. We fabricated Ga2O3/SiC heterojunction diodes by RF sputtering and after the fabrication the post-annealing in various gas atmospheres was performed. We measured the changes in deep-level defects using Deep Level Transient Spectroscopy (DLTS) and we conducted an electrical characteristic of J-V measurement and Hall measurement to analyzed the effects of annealing atmosphere on Ga2O3/SiC heterojunction diode. In the N2 annealed devices, the highest on-state current was measured as 3.06 × 10-2 A/cm^2, and an increase in carrier concentration of 3.8 × 1014 cm-3 was observed. This confirms that the variations in deep level defects due to the post-annealing atmosphere can influence the electrical properties.
참고문헌 (17)
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