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더블게이트 실리콘 나노시트 피드백 전계효과트랜지스터의 전기적 특성에 미치는 열처리 효과

Effects of Annealing on Electrical Characteristics of Double-Gated Silicon Nanosheet Feedback Field-Effect Transistors

조경아|김상식|류승호|허효주|신연우|손재민
한국전기전자학회 (Institute of Korean Electrical and Electronics Engineers)|2023.12|전기전자학회논문지 (Journal of IKEEE)|제27권 제4호|pp. 418-424|DOI doi.org/10.7471/ikeee.2023.27.4.418

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참고문헌

키워드

annealingFeedback field-effect transistorssilicon nanosheetbias stressinterface trap
주제분류전자/정보통신공학

초록

본 연구에서는 더블게이트 실리콘 나노시트 (SiNS) 피드백 전계효과 트랜지스터 (FBFET)의 전기적 특성에 열처리가 미치는영향을 분석하였다. 1000 초 동안 바이어스 스트레스를 인가했을 때 더블게이트 SiNS FBFET는 inversion layer의 전자에 의한계면 트랩의 증가로 인해 채널 모드와 무관하게 negative bias stress 보다는 positive bias stress의 영향을 더 많이 받았다. 300℃에서 10 분 동안 열처리를 진행한 이후 소자는 원래의 특성을 완전히 회복하였으며 다시 1000 초 동안 바이어스 스트레스를 인가해도 특성이 변하지 않았다.

Abstract

In this study, we examined the effects of annealing on electrical characteristics of double-gated silicon nanosheet(SiNS) feedback field effect transistors (FBFETs). When bias stresses were applied for 1000 s, the double-gated SiNSFBFETs were more affected by positive bias stresses than negative bias stresses regardless of the channel modeowing to the increase of interface traps caused by electrons in the inversion layers. After annealing at 300 °C for10 mins, the devices were completely recovered to their original properties, and the characteristics did not changeanymore when bias stresses were applied again for 1000 s.

참고문헌 (24)

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