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Wide bandgap III-nitride semiconductors: opportunities for future optoelectronics
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Bulk and homoepitaxial films of III-V nitride semiconductors: Optical studiesJaime A. Freitas, Jr청정에너지연구소 · Journal of Ceramic Processing Research2005 · 제6권 제3호Growth and characterization of the high quality ZnTe epilayers for optoelectronic devicesDae-JungKim, Yang-JuneJung, YongDaeChoi, Young-MoonYu한국결정성장학회 · 한국결정성장학회지2003 · 제13권 제3호Group III-nitride radial heterojunction nanowire light emitters김지현, 김홍렬, Blake Simpkins, Charles R. Eddy, Jr., Fritz Kub, Jaehui Ahn, Josh Caldwell, Mark Twigg, Michael A. Mastro, Orest Glembocki, Ron T. Holm청정에너지연구소 · Journal of Ceramic Processing Research2008 · 제9권 제6호Field electron emission from polycrystalline GaN nanorodsH. Asahi, S. Hasegawa, S. Nishida, T. Yamashita청정에너지연구소 · Journal of Ceramic Processing Research2005 · 제6권 제3호Indium assisted hydride vapor phase epitaxy of GaN filmAizhen Li, Benliang Lei, Gerard Nouet, Guanghui Yu, Haohua Ye, JPierre Ruterana, Jun Chen, Ming Qi, Sheng Meng청정에너지연구소 · Journal of Ceramic Processing Research2006 · 제7권 제2호Structural characteristics and electronic properties of GaN with NV, ON, and NV-ON: first-principles calculations이성호, 정용재한국결정성장학회 · 한국결정성장학회지2007 · 제17권 제5호
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