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Structural characteristics and electronic properties of GaN with NV, ON, and NV-ON: first-principles calculations

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참고문헌 (15)

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  3. "Intrin-sic defect properties in GaN calculated by ab initio and empirical potential methods", 70, pp.208~245 (2004)
  4. "Thermal stability of isolated and complexed Ga vacan-cies in GaN bulk crystal", 64, pp.201~233 (2001)
  5. "Gallium vacan-cies and the yellow luminescence in GaN", 69, pp.503~ (1996)
  6. "Generalized gradient approximation made simple", 77, pp.3865~ (1996)
  7. "Ab initio molecular dynamics for liquid metals", pp.558~ (1993)
  8. "Unusualproperties of the fundamental band gap of InN", 80, pp.3967~ (2002)
  9. "Properties of Group-III Nitrides and EMIS Data Reviews"
  10. "First-princi-ples calculations for defects and impurities: Aplica-tions to III-nitrides", 95, pp.3851~ (2004)
  11. "First-principles studies of beryllium doping of GaN", 63, pp.205~245 (2001)
  12. "Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-asisted molecular beam epitaxy", 82, pp.5472~ (1997)
  13. "Critical issues for the growth of high-quality(Al,Ga)N", GaN and GaN, pp.1999, 75[DOI]
  14. "“The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxy”", pp.651~ (1992)
  15. "“Atomic geometry and electronic structure of native defects in GaN”", pp.8067~ (1994)

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