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Structural characteristics and electronic properties of GaN with NV, ON, and NV-ON: first-principles calculations
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참고문헌 (15)
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- "Properties of Group-III Nitrides and EMIS Data Reviews"
- "First-princi-ples calculations for defects and impurities: Aplica-tions to III-nitrides", 95, pp.3851~ (2004)
- "First-principles studies of beryllium doping of GaN", 63, pp.205~245 (2001)
- "Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-asisted molecular beam epitaxy", 82, pp.5472~ (1997)
- "Critical issues for the growth of high-quality(Al,Ga)N", GaN and GaN, pp.1999, 75[DOI]
- "“The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxy”", pp.651~ (1992)
- "“Atomic geometry and electronic structure of native defects in GaN”", pp.8067~ (1994)
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