분자선 에피성장법으로 성장된 ZnSe/GaAs의 특성
Property of molecular beam epitaxy-grown ZnSe/GaAs
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초록
본 연구에서는 초고진공(UHV, ultra high vacuum) 분자선 에피성장(MBE, molecular beam epitaxy) 시스템을 제 작하여, ZnSe/GaAs[001]을 증착하였고, 증착된 박막의 특성을 SEM(scanning electron microscopy), AFM(atomic force microscopy)으로 조사하여, 분자층 단위의 조밀하고 균일한 표면특성을 보이고 있음을 확인할 수 있었다. XRD(x-ray diffractometer)를 이용하여, GaAs[001]기판의 XRD peak 위치와 ZnSe 박막의 XRD peak 위치가 각각 일치함을 확인할 수 있었다. PL(photoluminescence)로는 대략 437 nm에서 발광하는 것이 관측되었으며, 2인치 ZnSe 박막의 PL mapping을 측정 하였다.
Abstract
We have installed an ultra high vacuum (UHV) molecular beam epitaxy (MBE) system and investigated into the characteristics of MBE-grown ZnSe/GaAs [001] using scanning electron microscopy (SEM), atomic force microscopy (AFM), we confirmed that layer's surface was dense and uniform of molecular layer. We used x-ray diffractometer (XRD) and confirmed two peaks correspond to GaAs [001] substrate and ZnSe epilayer, respectively. We observed photoluminescence (PL) peak approximately at 437 nm and measured PL mapping of 2 inch ZnSe epilayer.
참고문헌 (7)
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